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MJ21193G

Onsemi

MJ21193G by Onsemi

MJ21193G by Onsemi is a PNP BJT with 250V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power setups.

Median Price

$6.800

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,329 parts In-Stock

1+ parts

$4.740

100+ parts

$4.460

1k+ parts

$4.030

10k+ parts

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6,329

$4.740

$4.460

$4.030

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Farnell

UK . 292 parts In-Stock

1+ parts

$6.800

100+ parts

$3.940

1k+ parts

$3.860

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292

$6.800

$3.940

$3.860

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Chip1Stop

Japan . 123 parts In-Stock

1+ parts

$7.410

100+ parts

$4.100

1k+ parts

$3.720

10k+ parts

$3.330

123

$7.410

$4.100

$3.720

$3.330

Newark

USA . 213 parts In-Stock

1+ parts

$8.730

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-

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213

$8.730

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DigiKey

USA . 2,579 parts In-Stock

1+ parts

$9.100

100+ parts

$4.608

1k+ parts

$4.064

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2,579

$9.100

$4.608

$4.064

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Element14

Singapore . 120 parts In-Stock

1+ parts

$12.120

100+ parts

$6.600

1k+ parts

$5.910

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120

$12.120

$6.600

$5.910

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Verical

USA . 5,368 parts In-Stock

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-

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$5.088

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$4.550

10k+ parts

$4.275

5,368

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$5.088

$4.550

$4.275

Master Electronics

USA . 703 parts In-Stock

1+ parts

-

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$4.150

1k+ parts

$3.950

10k+ parts

$3.910

703

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$4.150

$3.950

$3.910

Avnet

USA . 100 parts In-Stock

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100

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RS (Exports)

UK . 30 parts In-Stock

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$5.733

1k+ parts

$6.209

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30

-

$5.733

$6.209

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 458 parts In-Stock

1+ parts

$4.294

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458

$4.294

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Nova Conductors

Japan . 50 parts In-Stock

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$5.980

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50

$5.980

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TME

Poland . 94 parts In-Stock

1+ parts

$8.960

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$5.980

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94

$8.960

$5.980

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Chip Stock

USA . 11,119 parts In-Stock

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Vyrian

USA . 2,866 parts In-Stock

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Flip Electronics

USA . 1,700 parts In-Stock

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1,700

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IBS Electronics

USA . 703 parts In-Stock

1+ parts

-

100+ parts

$5.820

1k+ parts

$5.540

10k+ parts

$5.484

703

-

$5.820

$5.540

$5.484

NAC Semi

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$10.000

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$9.000

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300

-

$10.000

$9.000

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Bristol Electronics

USA . 5 parts In-Stock

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5

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First Choice Components Inc.

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 802 parts In-Stock

1+ parts

$1.470

100+ parts

-

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802

$1.470

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Ampacity Inc.

Singapore . 1,196 parts In-Stock

1+ parts

$2.670

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1,196

$2.670

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Corphita

USA . 2,423 parts In-Stock

1+ parts

$4.068

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2,423

$4.068

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Corohmni

South Africa . 166 parts In-Stock

1+ parts

$4.180

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166

$4.180

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Component Stockers USA

USA . 4,777 parts In-Stock

1+ parts

$4.630

100+ parts

$4.360

1k+ parts

$3.940

10k+ parts

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4,777

$4.630

$4.360

$3.940

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Continental Prestige Electronics

USA . 1,570 parts In-Stock

1+ parts

$5.980

100+ parts

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$5.860

1,570

$5.980

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$5.860

Netroflash

USA . 50 parts In-Stock

1+ parts

$5.980

100+ parts

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1k+ parts

$5.681

10k+ parts

$5.561

50

$5.980

-

$5.681

$5.561

Advanced Electronics

New Zealand . 70 parts In-Stock

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$6.100

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$6.100

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$6.100

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70

$6.100

$6.100

$6.100

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Perfect Parts

USA . 18,555 parts In-Stock

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Lixinc

USA . 16,668 parts In-Stock

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Microchip USA

USA . 11,291 parts In-Stock

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Kulean Microsystems

USA . 6,070 parts In-Stock

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Argo Parts USA

USA . 4,182 parts In-Stock

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SupplyDigital Components

Austria . 3,002 parts In-Stock

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Authorized Procurement Solutions

USA . 2,384 parts In-Stock

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2,384

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iodParts Technologies Inc.

India . 2,384 parts In-Stock

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2,384

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GreenTree Electronics

Israel . 2,384 parts In-Stock

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TANS Electronics

Latvia . 411 parts In-Stock

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411

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UHIMA Technologies

Türkiye . 183 parts In-Stock

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Problanco Electronics

Mexico . 138 parts In-Stock

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Eastek

USA . 100 parts In-Stock

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Kepictronics

USA . 70 parts In-Stock

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Overview

Elevate your amplification projects with the MJ21193G Power Bipolar Junction Transistor from Onsemi. As a respected manufacturer in the industry, Onsemi delivers top-quality products that meet the highest standards. The MJ21193G is perfect for amplifier applications, offering a maximum power dissipation of 250W and a maximum collector-emitter voltage of 250V. With a single PNP configuration and a minimum DC current gain of 8, this transistor provides exceptional performance and reliability. Trust in Onsemi to bring you the best in power transistors for your projects.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides excellent heat dissipation, allowing the transistor to operate at high power levels without overheating.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplification applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in applications where only one transistor is needed.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying electrical signals.

Package Shape: ROUND

The round package shape allows for easy installation and placement in circular or rounded electronic systems.

Maximum Power Dissipation (Abs): 250 W

With a high maximum power dissipation rating of 250 W, this transistor can handle high power levels effectively.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200°C enables the transistor to withstand elevated temperatures in demanding applications.

Maximum Collector-Emitter Voltage: 250 V

The high maximum collector-emitter voltage rating of 250 V allows the transistor to handle high voltage levels without breakdown.

Maximum Collector Current (IC): 16 A

With a high maximum collector current rating of 16 A, this transistor can handle substantial current loads in applications.

Nominal Transition Frequency (fT): 4 MHz

The nominal transition frequency of 4 MHz indicates the transistor's ability to switch quickly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ21193G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ21193G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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