Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MJ21193 by Onsemi is a PNP BJT transistor with 250V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high transition frequency of 4MHz. Package style is flange mount with round shape and metal body material.
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Metal package provides good heat dissipation, making the transistor ideal for high power applications.
PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.
Single configuration simplifies circuit design and integration.
Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.
Pin/peg terminals provide easy and secure connections in circuits.
High power dissipation capability allows the transistor to handle large amounts of power without overheating.
High collector-emitter voltage rating enables the transistor to be used in high voltage applications.
High collector current rating allows the transistor to handle large current loads.
High transition frequency indicates fast switching speeds, making the transistor suitable for high-frequency applications.
Power Bipolar Junction Transistors (BJT) MJ21193 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi
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MJ21193 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
M39029/58360
Esterline Technologies
CONNECTOR ACCESSORY; Terminal Type: CRIMP; Removal Tools: M81969/14-01; Associated Military - Specifications: MIL-DTL-38999; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT;
BSS138
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
M24308/2-1F
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
1N4148
Grande Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Good-ark Electronics
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;
Invensys Sensor Systems
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99-7-F
Multicomp Pro
EEAGA1H4R7
Panasonic
Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.
2N7002
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Eic Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
LL4148
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
International Semiconductor
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
TIP112
STMicroelectronics
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;
TIP125
Continental Device India
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Peak Reflow Temperature (C): NOT SPECIFIED;
BUV48A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; No. of Elements: 1;
BD14016
Fairchild Semiconductor
Fairchild Semiconductor's BD14016 is a PNP BJT transistor with 80V VCE, 1.5A IC, and 12.5W power dissipation. Ideal for switching applications due to its single configuration and hFE of 100, it comes in a plastic/epoxy package with through-hole terminals.
2SC5200O
Unisonic Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP115
Motorola
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
BD138
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP120
Transys Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum Operating Temperature: -65 Cel;
TIP117
TIP31C
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP122FP
TIP122FP by STMicroelectronics is a NPN power BJT with 100V VCEO, 5A IC, and 2W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and comes in a rectangular package with through-hole terminals.
TIP127
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
BD679A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
ULN2803AP
Toshiba
Toshiba's ULN2803AP is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Features include VCEsat of 1.6V, hFE min of 1000, and IC max of 0.5A. With a max operating temp of 85°C and VCE max of 50V, it offers reliable performance in various electronic circuits.
TIP42C
Rectron
PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJD127T4
MJD127T4 by Onsemi is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and surface mount capability, it offers high power dissipation up to 20W in a compact rectangular shape.
Texas Instruments
TIP42C by Texas Instruments is a PNP BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Terminal Position: SINGLE; Transistor Application: AMPLIFIER;
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MJ21194G
MJ21194G by Onsemi is a NPN Power BJT with 250V VCE, 16A IC, and 250W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. Packaged in metal flange mount style with bottom pin terminals for easy installation.
MJ21193G
MJ21193G by Onsemi is a PNP BJT with 250V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power setups.
MJ21196G
MJ21196G by Onsemi is a NPN BJT with 250V VCE, 16A IC, and 250W Ptot. Ideal for amplifier applications due to its high power dissipation, low hFE of 8, and operating temperature up to 200°C. The transistor's silicon element and flange mount package make it suitable for high-power amplification needs.
MJ21194
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 16 A;
MJ21195
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 16 A;
MJ21195G
MJ21195G by Onsemi is a PNP BJT with 250V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 8. The transistor's silicon element material ensures reliable performance at up to 200°C operating temperature.
MJ21196
MJ21294
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 20 A;
MJ21294G
MJ21193
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 16 A; Transistor Element Material: SILICON;
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 16 A; Case Connection: COLLECTOR;
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