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MJ21195

Onsemi

MJ21195 by Onsemi

MJ21195 by Onsemi is a PNP BJT with 250V VCE, 16A IC, and 250W Pd. Ideal for amplifier applications due to its single configuration and high hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power amplification in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 8,902 parts In-Stock

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Digiode

USA . 410 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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LittleDiode

UK . 5 parts In-Stock

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Benley Electronics

USA . 6 parts In-Stock

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Problanco Electronics

Mexico . 8,077 parts In-Stock

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TANS Electronics

Latvia . 7,459 parts In-Stock

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SupplyDigital Components

Austria . 6,027 parts In-Stock

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Kulean Microsystems

USA . 4,425 parts In-Stock

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UHIMA Technologies

Türkiye . 928 parts In-Stock

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Corphita

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Corohmni

South Africa . 164 parts In-Stock

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Overview

Upgrade your amplifier with the MJ21195 from Onsemi, a high-quality Power Bipolar Junction Transistor that delivers superior performance and reliability. Manufactured by Onsemi, a trusted industry leader, this PNP transistor offers a maximum power dissipation of 250W and a maximum collector-emitter voltage of 250V. Ideal for amplifier applications, this single configuration transistor ensures optimal functionality and efficiency. Enhance your audio experience with the MJ21195 and enjoy unparalleled quality and value.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent thermal conductivity and mechanical durability, allowing for efficient heat dissipation and ruggedness in various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures ease of use in various electronic projects.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, suitable for a wide range of electronic designs.

Terminal Form: PIN/PEG

Pin/peg terminal form enables straightforward connection to circuit boards or other components, facilitating assembly and integration.

Maximum Power Dissipation (Abs): 250 W

High maximum power dissipation rating of 250 W ensures reliability and stable operation even under demanding conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting options, enhancing durability and stability in various applications.

Minimum DC Current Gain (hFE): 8

Minimum DC current gain of 8 ensures consistent performance and reliable amplification of signals.

Maximum Operating Temperature: 200 °C

High maximum operating temperature of 200 °C enables this transistor to withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 250 V

High maximum collector-emitter voltage of 250 V allows for efficient signal amplification and power handling capabilities.

Transistor Element Material: SILICON

Silicon-based transistor element material provides high performance and reliability, ensuring long-term usability in various electronic applications.

Maximum Collector Current (IC): 16 A

High maximum collector current rating of 16 A enables this transistor to handle significant power loads with efficiency and stability.

Terminal Finish: TIN LEAD

Tin-lead terminal finish offers good solderability and electrical conductivity, ensuring reliable connections in electronic circuits.

Terminal Position: BOTTOM

Bottom terminal position simplifies connection and integration in circuit designs, optimizing space utilization and ease of use.

Case Connection: COLLECTOR

Collector case connection enhances heat dissipation and electrical performance, ensuring reliable operation in various electronic circuits.

Peak Reflow Temperature °C: 235

High peak reflow temperature of 235 °C allows for robust soldering and assembly processes, ensuring durability and reliability in electronic applications.

Nominal Transition Frequency (fT): 4 MHz

Nominal transition frequency of 4 MHz indicates fast switching characteristics, making this transistor suitable for high-frequency applications such as amplifiers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ21195 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ21195 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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