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MJ21294

Onsemi

MJ21294 by Onsemi

MJ21294 by Onsemi is a NPN BJT transistor with 350W power dissipation, 250V max collector-emitter voltage, and 20A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 200 °C. Its round package shape with flange mount style makes it suitable for various power electronics designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,420 parts In-Stock

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Digiode

USA . 1,253 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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350

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Kulean Microsystems

USA . 4,721 parts In-Stock

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4,721

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TANS Electronics

Latvia . 1,225 parts In-Stock

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Problanco Electronics

Mexico . 1,082 parts In-Stock

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1,082

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SupplyDigital Components

Austria . 830 parts In-Stock

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830

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Corphita

USA . 674 parts In-Stock

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674

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Corohmni

South Africa . 397 parts In-Stock

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UHIMA Technologies

Türkiye . 314 parts In-Stock

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Overview

Enhance your power electronics projects with the MJ21294 by Onsemi, a top-quality Power BJT transistor designed for switching applications. With a maximum power dissipation of 350W and a maximum collector current of 20A, this NPN transistor offers reliable performance and durability. Onsemi's reputation for excellence in semiconductor manufacturing ensures that you are getting a product that meets the highest industry standards. Whether you are working on industrial automation, motor control, or power supply designs, the MJ21294 provides the value, efficiency, and versatility you need to take your projects to the next level. Elevate your creations with Onsemi's MJ21294 today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity and durability, ensuring reliable performance in high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits, making this product suitable for various electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, improving overall efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient performance in electronic circuits.

Package Shape: ROUND

Round package shape is compact and space-efficient, making it suitable for applications with limited space.

Terminal Form: PIN/PEG

Pin/peg terminals provide easy and secure connections, making installation and maintenance convenient.

Maximum Power Dissipation (Abs): 350 W

High maximum power dissipation allows the transistor to handle high power levels without overheating, ensuring reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides a secure and stable mounting option, suitable for industrial applications.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures optimal performance and efficiency in electronic circuits.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows the transistor to operate in a wide range of environmental conditions, increasing versatility.

Maximum Collector-Emitter Voltage: 250 V

High maximum collector-emitter voltage makes this transistor suitable for applications requiring high voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material ensures reliable and stable performance, making the transistor suitable for long-term use.

Maximum Collector Current (IC): 20 A

High maximum collector current allows the transistor to handle large currents, making it suitable for high-power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides reliable solder joints, ensuring secure connections for stable performance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy installation and circuit design, making it suitable for various applications.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and design, improving overall efficiency.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable soldering and rework, ensuring consistent performance over time.

Nominal Transition Frequency (fT): 4 MHz

High nominal transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ21294 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ21294 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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