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MJ21194

Onsemi

MJ21194 by Onsemi

MJ21194 by Onsemi is a NPN BJT with 250V VCE, 16A IC, and 250W Pd. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. Package style is flange mount with round shape and metal body material.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,240 parts In-Stock

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Bristol Electronics

USA . 1,810 parts In-Stock

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Vyrian

USA . 1,537 parts In-Stock

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Electronics Depot

USA . 74 parts In-Stock

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TANS Electronics

Latvia . 7,138 parts In-Stock

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Kulean Microsystems

USA . 4,918 parts In-Stock

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SupplyDigital Components

Austria . 2,940 parts In-Stock

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Problanco Electronics

Mexico . 2,901 parts In-Stock

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Corphita

USA . 1,660 parts In-Stock

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UHIMA Technologies

Türkiye . 634 parts In-Stock

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Corohmni

South Africa . 359 parts In-Stock

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Kepictronics

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Overview

Upgrade your power amplifier with the MJ21194 by Onsemi. Manufactured to the highest standards, this NPN Power BJT offers exceptional performance and reliability. Ideal for applications in amplifiers, this transistor provides a maximum collector-emitter voltage of 250V and a maximum power dissipation of 250W. With a minimum DC current gain of 8, this transistor ensures optimal efficiency and functionality. Trust Onsemi for superior quality components that deliver unmatched value and performance.

Feature Benefit Bullets

Package Body Material: METAL

Metal packaging provides excellent thermal conductivity, allowing for efficient heat dissipation and ensuring the transistor operates at optimal temperature levels.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes in electronic circuits, making this product suitable for amplifier applications.

Maximum Power Dissipation (Abs): 250 W

With a high maximum power dissipation of 250W, this transistor can handle large amounts of power without overheating, making it reliable for demanding applications.

Maximum Collector-Emitter Voltage: 250 V

The high maximum collector-emitter voltage rating of 250V allows the transistor to withstand high voltage levels, increasing its versatility in various circuit designs.

Maximum Collector Current (IC): 16 A

With a high maximum collector current of 16A, this transistor is capable of handling large current loads, making it suitable for applications that require high current amplification.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4MHz indicates that this transistor can switch rapidly between on and off states, enabling it to operate efficiently in high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ21194 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ21194 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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