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MJ21195G

Onsemi

MJ21195G by Onsemi

MJ21195G by Onsemi is a PNP BJT with 250V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 8. The transistor's silicon element material ensures reliable performance at up to 200°C operating temperature.

Median Price

$7.410

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 218 parts In-Stock

1+ parts

$8.820

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218

$8.820

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Mouser Electronics

USA . 598 parts In-Stock

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$9.240

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598

$9.240

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DigiKey

USA . 290 parts In-Stock

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$9.240

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$4.685

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$4.144

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290

$9.240

$4.685

$4.144

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Rochester

USA . 3,481 parts In-Stock

1+ parts

-

100+ parts

$4.140

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$3.710

10k+ parts

$3.490

3,481

-

$4.140

$3.710

$3.490

Verical

USA . 2,894 parts In-Stock

1+ parts

-

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$5.175

1k+ parts

$4.638

10k+ parts

$4.362

2,894

-

$5.175

$4.638

$4.362

EBV Elektronik

Germany . 100 parts In-Stock

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100

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RS (Exports)

UK . 70 parts In-Stock

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$5.999

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70

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$5.999

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Distributors (In-Stock)

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Vyrian

USA . 735 parts In-Stock

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$4.150

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735

$4.150

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Digiode

USA . 2,106 parts In-Stock

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$4.370

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2,106

$4.370

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TME

Poland . 70 parts In-Stock

1+ parts

$8.720

100+ parts

$6.100

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70

$8.720

$6.100

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IBS Electronics

USA . 934 parts In-Stock

1+ parts

-

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$5.922

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$5.600

10k+ parts

$5.544

934

-

$5.922

$5.600

$5.544

Schukat

Germany . 200 parts In-Stock

1+ parts

-

100+ parts

$6.057

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$5.190

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200

-

$6.057

$5.190

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NAC Semi

USA . 100 parts In-Stock

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$10.930

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100

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$10.930

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Bristol Electronics

USA . 6 parts In-Stock

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6

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Distributors (Availability)

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Corphita

USA . 1,208 parts In-Stock

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$4.140

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$4.140

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Corohmni

South Africa . 240 parts In-Stock

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$4.150

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240

$4.150

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Microchip USA

USA . 6,720 parts In-Stock

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$23.408

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6,720

$23.408

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Lixinc

USA . 9,951 parts In-Stock

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Kulean Microsystems

USA . 8,251 parts In-Stock

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TANS Electronics

Latvia . 7,780 parts In-Stock

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7,780

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Continental Prestige Electronics

USA . 7,676 parts In-Stock

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7,676

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SupplyDigital Components

Austria . 7,637 parts In-Stock

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7,637

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A-Z Elektronik GmbH

Germany . 7,178 parts In-Stock

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Problanco Electronics

Mexico . 6,211 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,547 parts In-Stock

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Metaverse IC Inc.

Canada . 660 parts In-Stock

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660

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Perfect Parts

USA . 530 parts In-Stock

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530

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Kepictronics

USA . 517 parts In-Stock

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517

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UHIMA Technologies

Türkiye . 189 parts In-Stock

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189

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Overview

Enhance your electronic designs with the MJ21195G Power BJT by Onsemi. With a maximum operating temperature of 200°C and a collector current of 16A, this PNP transistor is perfect for amplifier applications. Onsemi's reputation for quality ensures reliability and performance. Upgrade your projects with the MJ21195G and experience the value and benefits it brings to your designs. Whether you're a hobbyist or a professional, this transistor will take your creations to the next level.

Feature Benefit Bullets

Package Body Material: METAL

Provides durability and heat dissipation, making it suitable for high power applications.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, such as amplifier circuits.

Configuration: SINGLE

Simplifies circuit design and implementation.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring good performance in such applications.

Package Shape: ROUND

Allows for easy mounting and integration into various systems.

Terminal Form: PIN/PEG

Facilitates easy connectivity and installation in circuits.

Maximum Power Dissipation (Abs): 250 W

Can handle high power levels without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Provides a secure and stable mounting option for the transistor.

Minimum DC Current Gain (hFE): 8

Ensures sufficient gain for amplification purposes.

Maximum Operating Temperature: 200 °C

Can operate reliably at elevated temperatures, suitable for industrial environments.

Maximum Collector-Emitter Voltage: 250 V

Allows for higher voltage handling capabilities.

Maximum Collector Current (IC): 16 A

Can handle high current levels, making it suitable for power applications.

Terminal Finish: MATTE TIN

Provides a reliable and low resistance connection.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and soldering.

Case Connection: COLLECTOR

Clearly indicates the connection point for the collector terminal.

Nominal Transition Frequency (fT): 4 MHz

Indicates the frequency at which the transistor can switch between on and off states effectively.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ21195G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ21195G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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