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MJD31C1G

Onsemi

MJD31C1G by Onsemi

The Onsemi MJD31C1G is a NPN BJT transistor with 3 terminals, capable of handling up to 15W power dissipation. With a max collector-emitter voltage of 100V and max collector current of 3A, it's ideal for amplifier applications. Featuring a min DC current gain of 10 and operating temperature up to 150°C, this transistor offers reliable performance in various electronic circuits.

Median Price

$0.288

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 11,380 parts In-Stock

1+ parts

-

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$0.300

1k+ parts

$0.249

10k+ parts

$0.222

11,380

-

$0.300

$0.249

$0.222

Verical

USA . 11,325 parts In-Stock

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$0.277

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$0.277

Flip Electronics (Authorized)

USA . 225 parts In-Stock

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225

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Digiode

USA . 1,009 parts In-Stock

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$0.245

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$0.245

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Nova Conductors

Japan . 10 parts In-Stock

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$0.371

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10

$0.371

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Chip Stock

USA . 472,584 parts In-Stock

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Vyrian

USA . 5,894 parts In-Stock

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Flip Electronics

USA . 225 parts In-Stock

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Elcom Components

USA . 68 parts In-Stock

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68

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Distributors (Availability)

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Ampacity Inc.

Singapore . 140 parts In-Stock

1+ parts

$0.219

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-

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140

$0.219

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Semicontronic

India . 76 parts In-Stock

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$0.219

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$0.214

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$0.212

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76

$0.219

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$0.212

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Corphita

USA . 273 parts In-Stock

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$0.232

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273

$0.232

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Corohmni

South Africa . 68 parts In-Stock

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$0.258

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68

$0.258

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Component Stockers USA

USA . 137 parts In-Stock

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$0.260

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$0.250

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137

$0.260

$0.250

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.355

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$0.355

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$0.355

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600

$0.355

$0.355

$0.355

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Continental Prestige Electronics

USA . 6,299 parts In-Stock

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$0.371

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$0.364

6,299

$0.371

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$0.364

Argo Parts USA

USA . 3,800 parts In-Stock

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$0.371

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$0.360

3,800

$0.371

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$0.360

Aztec Data Supply Inc.

USA . 3,494 parts In-Stock

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$1.550

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$1.550

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AZTECH Wire

Italy . 116 parts In-Stock

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$21.570

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,201 parts In-Stock

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Perfect Parts

USA . 8,774 parts In-Stock

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SupplyDigital Components

Austria . 6,935 parts In-Stock

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Lixinc

USA . 4,205 parts In-Stock

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Kulean Microsystems

USA . 3,324 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 1,711 parts In-Stock

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TANS Electronics

Latvia . 1,012 parts In-Stock

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UHIMA Technologies

Türkiye . 961 parts In-Stock

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Eastek

USA . 450 parts In-Stock

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GreenTree Electronics

Israel . 450 parts In-Stock

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Kepictronics

USA . 161 parts In-Stock

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Overview

Looking to amplify your electronics projects with reliable and high-quality transistors? Look no further than the MJD31C1G by Onsemi! As a trusted manufacturer in the industry, Onsemi delivers top-notch power bipolar junction transistors that are perfect for amplifier applications. With a maximum collector-emitter voltage of 100V and a maximum collector current of 3A, this NPN transistor offers exceptional performance and durability. Say goodbye to worries about overheating with a maximum power dissipation of 15W. Upgrade your projects today with the MJD31C1G and experience the value and benefits that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplifier circuits for signal amplification.

Maximum Power Dissipation (Abs): 15 W

High power dissipation capability allows for handling of larger power loads.

Maximum Operating Temperature: 150 °C

The high operating temperature range provides versatility in various applications.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for efficient switching and amplification of signals.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD31C1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD31C1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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