Loading...

MJF18008G

Onsemi

MJF18008G by Onsemi

The Onsemi MJF18008G is a NPN BJT transistor with 450V VCEO, 8A IC, and 45W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. Its package style is flange mount with through-hole terminals.

Median Price

$3.540

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1 parts In-Stock

1+ parts

$2.690

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$2.690

-

-

-

DigiKey

USA . 31 parts In-Stock

1+ parts

$3.540

100+ parts

$1.616

1k+ parts

$1.221

10k+ parts

$1.150

31

$3.540

$1.616

$1.221

$1.150

Mouser Electronics

USA . 7 parts In-Stock

1+ parts

$3.820

100+ parts

$1.820

1k+ parts

$1.410

10k+ parts

-

7

$3.820

$1.820

$1.410

-

Flip Electronics (Authorized)

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,309 parts In-Stock

1+ parts

$1.976

100+ parts

-

1k+ parts

-

10k+ parts

-

1,309

$1.976

-

-

-

TME

Poland . 177 parts In-Stock

1+ parts

$3.310

100+ parts

$1.630

1k+ parts

$1.560

10k+ parts

-

177

$3.310

$1.630

$1.560

-

Vyrian

USA . 4,264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,264

-

-

-

-

NAC Semi

USA . 400 parts In-Stock

1+ parts

-

100+ parts

$2.760

1k+ parts

$2.480

10k+ parts

-

400

-

$2.760

$2.480

-

Chip Stock

USA . 313 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

313

-

-

-

-

Flip Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Inventory MP

USA . 81 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

81

-

-

-

-

Bristol Electronics

USA . 81 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

81

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,117 parts In-Stock

1+ parts

$1.872

100+ parts

-

1k+ parts

-

10k+ parts

-

1,117

$1.872

-

-

-

Corohmni

South Africa . 58 parts In-Stock

1+ parts

$2.080

100+ parts

-

1k+ parts

-

10k+ parts

-

58

$2.080

-

-

-

Component Stockers USA

USA . 406 parts In-Stock

1+ parts

$2.660

100+ parts

$1.760

1k+ parts

-

10k+ parts

-

406

$2.660

$1.760

-

-

SupplyDigital Components

Austria . 8,142 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,142

-

-

-

-

Kulean Microsystems

USA . 6,343 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,343

-

-

-

-

Problanco Electronics

Mexico . 5,195 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,195

-

-

-

-

Lixinc

USA . 4,199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,199

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

UHIMA Technologies

Türkiye . 407 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

407

-

-

-

-

TANS Electronics

Latvia . 159 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

159

-

-

-

-

Kepictronics

USA . 37 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

37

-

-

-

-

Overview

Enhance your power management systems with the MJF18008G by Onsemi. Designed with precision and reliability in mind, this NPN Power BJT is tailored for switching applications, providing a seamless performance that exceeds industry standards. Boasting a maximum power dissipation of 45W and a collector-emitter voltage of 450V, this transistor offers unparalleled efficiency and durability. With a nominal transition frequency of 13MHz, the MJF18008G ensures optimal performance in a wide range of applications. Trust Onsemi to deliver top-notch quality and performance with every product, and elevate your projects to new heights with the MJF18008G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and reliability.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making them versatile for different designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast operation and high efficiency.

Package Shape: RECTANGULAR

Rectangular shape simplifies mounting and ensures proper alignment in circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy assembly onto circuit boards.

No. of Terminals: 3

Having 3 terminals allows for precise control and connectivity in circuit design.

Maximum Power Dissipation (Abs): 45 W

With a high power dissipation rating, this transistor can handle applications requiring significant power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy installation and secure attachment in systems.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 ensures amplification and proper functionality in various circuit configurations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF18008G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF18008G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20