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MJF15031G

Onsemi

MJF15031G by Onsemi

The Onsemi MJF15031G is a PNP BJT transistor with 150V VCEO, 8A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 20 and operates up to 150°C. The package style is flange mount with UL recognition, making it suitable for various power electronics designs.

Median Price

$2.013

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 250 parts In-Stock

1+ parts

$0.945

100+ parts

$0.732

1k+ parts

$0.667

10k+ parts

$0.663

250

$0.945

$0.732

$0.667

$0.663

DigiKey

USA . 414 parts In-Stock

1+ parts

$3.030

100+ parts

$1.357

1k+ parts

$1.015

10k+ parts

$0.927

414

$3.030

$1.357

$1.015

$0.927

Mouser Electronics

USA . 57 parts In-Stock

1+ parts

$3.030

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$1.270

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-

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57

$3.030

$1.270

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Chip1Stop

Japan . 95 parts In-Stock

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$3.410

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95

$3.410

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Verical

USA . 1,600 parts In-Stock

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$2.176

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$1.412

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$2.176

$1.412

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Master Electronics

USA . 1,600 parts In-Stock

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-

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$1.850

1k+ parts

$1.200

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$1.100

1,600

-

$1.850

$1.200

$1.100

Future Electronics

Canada . 50 parts In-Stock

1+ parts

-

100+ parts

$1.020

1k+ parts

$0.950

10k+ parts

$0.925

50

-

$1.020

$0.950

$0.925

Rochester

USA . 5 parts In-Stock

1+ parts

-

100+ parts

$1.260

1k+ parts

$1.050

10k+ parts

$0.932

5

-

$1.260

$1.050

$0.932

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,826 parts In-Stock

1+ parts

$0.978

100+ parts

-

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1,826

$0.978

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Vyrian

USA . 1,266 parts In-Stock

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$1.030

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1,266

$1.030

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TME

Poland . 14 parts In-Stock

1+ parts

$2.840

100+ parts

$1.340

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14

$2.840

$1.340

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IBS Electronics

USA . 1,750 parts In-Stock

1+ parts

-

100+ parts

$1.459

1k+ parts

$1.374

10k+ parts

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1,750

-

$1.459

$1.374

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NAC Semi

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

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$2.420

10k+ parts

$2.180

1,600

-

-

$2.420

$2.180

Flip Electronics

USA . 1,000 parts In-Stock

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1,000

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Cyclops Electronics Ltd

UK . 52 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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30

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Distributors (Availability)

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Ampacity Inc.

Singapore . 835 parts In-Stock

1+ parts

$0.880

100+ parts

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835

$0.880

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Corphita

USA . 1,897 parts In-Stock

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$0.927

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1,897

$0.927

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Corohmni

South Africa . 209 parts In-Stock

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$1.030

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209

$1.030

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Perfect Parts

USA . 55,110 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,921 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Authorized Procurement Solutions

USA . 7,923 parts In-Stock

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SupplyDigital Components

Austria . 5,913 parts In-Stock

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TANS Electronics

Latvia . 5,218 parts In-Stock

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Kulean Microsystems

USA . 3,040 parts In-Stock

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Problanco Electronics

Mexico . 2,832 parts In-Stock

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UHIMA Technologies

Türkiye . 865 parts In-Stock

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Eastek

USA . 450 parts In-Stock

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Glotronic Ltd.

UK . 360 parts In-Stock

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GreenTree Electronics

Israel . 123 parts In-Stock

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Assy Fe

Spain . 75 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 30 parts In-Stock

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30

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Overview

Unleash the power of innovation with the MJF15031G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. The MJF15031G, belonging to the Power Bipolar Junction Transistors (BJT) category, is perfect for switching applications, offering a maximum power dissipation of 50W and a maximum collector-emitter voltage of 150V. Its PNP configuration and single terminal form make it easy to use and versatile for various projects. Trust Onsemi to provide you with the tools you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability, making this transistor suitable for long-term use in various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits where PNP transistors are required, expanding the versatility of this product.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use, especially for basic switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient performance and reliable operation in switching circuits.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation of 50W, this transistor can handle heavy loads and high power levels, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures this transistor can withstand elevated temperatures, making it suitable for a wide range of environments and applications.

Maximum Collector-Emitter Voltage: 150 V

The high maximum collector-emitter voltage of 150V allows this transistor to be used in circuits with higher voltage requirements, enhancing its versatility.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8A, this transistor can handle high current loads, making it suitable for applications that require a greater current-carrying capacity.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency of 30MHz indicates that this transistor can switch rapidly between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF15031G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF15031G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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