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MJF18206

Onsemi

MJF18206 by Onsemi

The Onsemi MJF18206 is a NPN BJT transistor with 600V VCE, 8A IC, and 40W Ptot. Ideal for switching applications, it has a hFE of 5 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,081 parts In-Stock

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Vyrian

USA . 834 parts In-Stock

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834

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Kulean Microsystems

USA . 5,823 parts In-Stock

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5,823

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Problanco Electronics

Mexico . 4,165 parts In-Stock

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SupplyDigital Components

Austria . 3,183 parts In-Stock

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Corphita

USA . 1,331 parts In-Stock

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TANS Electronics

Latvia . 718 parts In-Stock

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UHIMA Technologies

Türkiye . 359 parts In-Stock

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Corohmni

South Africa . 339 parts In-Stock

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Overview

Power up your projects with the MJF18206 Power Bipolar Junction Transistor by Onsemi. Made from high-quality materials and designed for maximum performance, this NPN transistor is perfect for switching applications. With a maximum power dissipation of 40 W and a maximum collector-emitter voltage of 600 V, you can trust that this transistor will deliver reliable results every time. Whether you're working on industrial machinery or electronic devices, the MJF18206 offers the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer high efficiency.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to incorporate into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off operations.

Maximum Power Dissipation (Abs): 40 W

Can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing it to operate reliably in challenging environments.

Maximum Collector-Emitter Voltage: 600 V

Capable of handling high voltages, making it versatile for a wide range of voltage requirements.

Maximum Collector Current (IC): 8 A

Can handle high currents, making it suitable for applications that require a significant amount of current.

Nominal Transition Frequency (fT): 13 MHz

Offers fast switching speeds and high frequency performance, ideal for applications that require rapid on/off transitions.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF18206 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF18206 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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