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MJF18009

Onsemi

MJF18009 by Onsemi

MJF18009 by Onsemi is a NPN BJT transistor with 450V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 7 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,730 parts In-Stock

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Vyrian

USA . 1,469 parts In-Stock

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1,469

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TANS Electronics

Latvia . 7,647 parts In-Stock

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Kulean Microsystems

USA . 5,991 parts In-Stock

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SupplyDigital Components

Austria . 3,436 parts In-Stock

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Corphita

USA . 1,594 parts In-Stock

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Problanco Electronics

Mexico . 968 parts In-Stock

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UHIMA Technologies

Türkiye . 583 parts In-Stock

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Corohmni

South Africa . 240 parts In-Stock

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Overview

Unlock the power of innovation with the MJF18009 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) designed for switching applications. The MJF18009 offers customers exceptional value with its high power dissipation, low DC current gain, and superior collector-emitter voltage. Whether you're looking to enhance your electronic devices or optimize energy efficiency, the MJF18009 is the perfect solution. Trust Onsemi for reliability, performance, and cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for a variety of applications.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications.

Configuration: SINGLE

Simplified setup and ease of use for basic circuit designs.

Transistor Application: SWITCHING

Designed for efficient switching of electronic signals.

Package Shape: RECTANGULAR

Compact shape for easy integration into circuit boards.

Terminal Form: THROUGH-HOLE

Soldering terminals for secure and reliable connections.

Maximum Power Dissipation (Abs): 50 W

Capable of handling high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting in various applications.

Minimum DC Current Gain (hFE): 7

Provides a minimum level of current amplification for efficient performance.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments.

Maximum Collector-Emitter Voltage: 450 V

Capable of handling high voltage levels for versatile applications.

Transistor Element Material: SILICON

Reliable material known for its efficiency and durability.

Maximum Collector Current (IC): 10 A

Able to carry high current levels for powerful operations.

Terminal Finish: TIN LEAD

Ensures good conductivity and corrosion resistance in terminal connections.

Terminal Position: SINGLE

Simplified connection layout for easy installation.

Case Connection: ISOLATED

Prevents electrical interference and ensures stable performance.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during the reflow soldering process.

Nominal Transition Frequency (fT): 12 MHz

Allows for fast signal switching and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF18009 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF18009 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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