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MJF15031

Onsemi

MJF15031 by Onsemi

The Onsemi MJF15031 is a PNP BJT transistor with 150V VCEO, 8A IC, and 50W Ptot. Ideal for switching applications, it has a single configuration in a plastic/epoxy package suitable for flange mount. With an hFE of 20 and fT of 30MHz, it operates up to 140 °C and complies with UL standards.

Median Price

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Lifecycle Status

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Vyrian

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Velocity Electronics

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J2 Sourcing AB

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NAC Semi

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LittleDiode

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Elcom Components

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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SupplyDigital Components

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TANS Electronics

Latvia . 6,281 parts In-Stock

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Corphita

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Kulean Microsystems

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UHIMA Technologies

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Corohmni

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Overview

Experience unparalleled performance and reliability with the MJF15031 by Onsemi. As a leading manufacturer of Power Bipolar Junction Transistors, Onsemi delivers top-notch quality and cutting-edge technology in each product. This PNP transistor is ideal for switching applications, offering a maximum power dissipation of 50W and a maximum collector-emitter voltage of 150V. With a minimum DC current gain of 20, this transistor ensures efficient operation at a maximum collector current of 8A. Trust Onsemi to provide you with durable and high-performance components for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, ensuring its durability and reliability in various operating conditions.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in switching applications and can handle higher currents, making this transistor suitable for switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, making it easier to integrate this transistor into a circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for such applications.

Maximum Power Dissipation (Abs): 50 W

With a high power dissipation capacity of 50 W, this transistor can handle high power loads without overheating, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 150 V

The high collector-emitter voltage rating of 150 V allows this transistor to be used in applications where higher voltages are required, increasing its versatility.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8 A, this transistor can handle high currents, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 30 MHz

The high transition frequency of 30 MHz indicates that this transistor can operate at high frequencies, making it suitable for applications that require fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF15031 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF15031 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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