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MJF18006

Onsemi

MJF18006 by Onsemi

The Onsemi MJF18006 is a NPN BJT transistor with 450V VCEO, 6A IC, and 40W Ptot. Ideal for switching applications, it has hFE of 6 and operates up to 150 °C. Its package style is flange mount with UL recognition.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Digiode

USA . 2,280 parts In-Stock

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Vyrian

USA . 1,658 parts In-Stock

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LittleDiode

UK . 19 parts In-Stock

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Donberg Electronics Ltd

Ireland . 8 parts In-Stock

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Huijzer Components

Netherlands . 3 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Problanco Electronics

Mexico . 7,528 parts In-Stock

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SupplyDigital Components

Austria . 5,235 parts In-Stock

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Kulean Microsystems

USA . 4,962 parts In-Stock

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Corphita

USA . 2,173 parts In-Stock

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TANS Electronics

Latvia . 1,210 parts In-Stock

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UHIMA Technologies

Türkiye . 451 parts In-Stock

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Corohmni

South Africa . 450 parts In-Stock

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Assy Fe

Spain . 410 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Overview

Power up your applications with the MJF18006 by Onsemi, a high-quality Power Bipolar Junction Transistor that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this NPN transistor is perfect for switching applications with a maximum collector-emitter voltage of 450V and a maximum power dissipation of 40W. With a minimum DC current gain of 6 and a maximum collector current of 6A, this transistor provides exceptional value and benefits to customers looking for a durable and efficient solution. Upgrade your systems with the MJF18006 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into a system.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in this function.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to a circuit board.

Maximum Power Dissipation (Abs): 40 W

Capable of handling high power levels, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation for improved performance.

Minimum DC Current Gain (hFE): 6

Provides reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 450 V

Can withstand high voltage levels, expanding its range of applications.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and reliability.

Maximum Collector Current (IC): 6 A

Capable of handling high collector currents, suitable for power applications.

Terminal Finish: TIN LEAD

Provides corrosion resistance and reliable electrical connections.

Terminal Position: SINGLE

Simplifies the connection process and ensures proper orientation in a circuit.

Case Connection: ISOLATED

Helps prevent short circuits and ensures proper isolation in the circuit.

Reference Standard: UL RECOGNIZED

Complies with industry standards for safety and performance.

Nominal Transition Frequency (fT): 14 MHz

Allows for high-speed switching operations in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF18006 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF18006 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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