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MJF15030

Onsemi

MJF15030 by Onsemi

The Onsemi MJF15030 is a NPN BJT transistor with 150V VCEO, 8A IC, and 50W Ptot. Ideal for switching applications, it has a min hFE of 20 and operates up to 140 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.475

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15 parts In-Stock

1+ parts

-

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$0.475

1k+ parts

$0.395

10k+ parts

$0.352

15

-

$0.475

$0.395

$0.352

Distributors (In-Stock)

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Digiode

USA . 1,364 parts In-Stock

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$0.370

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1,364

$0.370

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DF Sales Co.

USA . 63 parts In-Stock

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$1.000

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63

$1.000

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DF Sales Co.

USA . 63 parts In-Stock

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$1.000

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63

$1.000

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Vyrian

USA . 2,195 parts In-Stock

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R&J Components

USA . 50 parts In-Stock

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Q Components

USA . 47 parts In-Stock

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NAC Semi

USA . 45 parts In-Stock

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PAR Electronics

UK . 37 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 35 parts In-Stock

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LittleDiode

UK . 11 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 940 parts In-Stock

1+ parts

$0.351

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940

$0.351

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Corohmni

South Africa . 338 parts In-Stock

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$0.390

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338

$0.390

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QUARKTWIN TECHNOLOGY LTD

USA . 26,234 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 4,671 parts In-Stock

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Kulean Microsystems

USA . 3,318 parts In-Stock

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Problanco Electronics

Mexico . 2,546 parts In-Stock

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Infinite Electronics LLP (Excess)

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A-Plus Industry Inc.

USA . 370 parts In-Stock

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370

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UHIMA Technologies

Türkiye . 343 parts In-Stock

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SupplyDigital Components

Austria . 251 parts In-Stock

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Overview

Discover the power and reliability of the Onsemi MJF15030 Power Bipolar Junction Transistor. With a maximum collector-emitter voltage of 150V and a maximum power dissipation of 50W, this NPN transistor is perfect for switching applications. Its high-quality construction and UL recognized reference standard ensure superior performance. Whether you're designing industrial equipment or automotive systems, the MJF15030 provides the value and efficiency you need to bring your projects to life. Elevate your designs with the trusted quality and innovation of Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and high resistance to heat, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to implement in various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient performance in switching circuits.

Maximum Power Dissipation: 50 W

With a high power dissipation of 50W, this transistor can handle significant power loads without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 150 V

The high collector-emitter voltage rating of 150V allows for versatile use in various electronic circuits without the risk of voltage breakdown.

Maximum Collector Current: 8 A

The high collector current rating of 8A enables this transistor to handle large current flows, making it suitable for high-power applications.

Nominal Transition Frequency: 30 MHz

The high transition frequency of 30MHz enables fast switching speeds in amplification circuits, improving overall system performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF15030 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF15030 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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