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MJF18002

Onsemi

MJF18002 by Onsemi

The Onsemi MJF18002 is a NPN BJT transistor with 25W power dissipation, 450V max collector-emitter voltage, and 2A max collector current. Ideal for switching applications, it has a min hFE of 6 and operates up to 150 °C. The package style is flange mount with through-hole terminals.

Median Price

$0.357

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.296

10k+ parts

$0.264

150

-

$0.357

$0.296

$0.264

Distributors (In-Stock)

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Digiode

USA . 1,014 parts In-Stock

1+ parts

$0.277

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$0.277

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Vyrian

USA . 2,734 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,550 parts In-Stock

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2,550

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Zilex Electronics Inc.

Canada . 1,600 parts In-Stock

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Component Electronics Inc.

Canada . 100 parts In-Stock

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MRC Electronics

USA . 73 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,947 parts In-Stock

1+ parts

$0.263

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$0.263

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Corohmni

South Africa . 199 parts In-Stock

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$0.292

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$0.292

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QUARKTWIN TECHNOLOGY LTD

USA . 17,000 parts In-Stock

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Perfect Parts

USA . 7,168 parts In-Stock

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TANS Electronics

Latvia . 4,724 parts In-Stock

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Problanco Electronics

Mexico . 3,633 parts In-Stock

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SupplyDigital Components

Austria . 3,104 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,550 parts In-Stock

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Kulean Microsystems

USA . 1,903 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Assy Fe

Spain . 600 parts In-Stock

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UHIMA Technologies

Türkiye . 293 parts In-Stock

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Metaverse IC Inc.

Canada . 150 parts In-Stock

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Overview

Unleash the power of innovation with the MJF18002 by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor is designed to revolutionize your switching applications. With a maximum power dissipation of 25W and a peak reflow temperature of 235 °C, this NPN transistor offers unparalleled performance and reliability. Whether you're in the automotive industry or working on industrial machinery, the MJF18002 delivers the value and quality you need to take your projects to the next level. Elevate your designs with Onsemi's cutting-edge technology and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the transistor lightweight and durable, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for various electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the transistor easy to use for both hobbyists and professionals.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, suitable for power control circuits.

Maximum Power Dissipation (Abs): 25 W

With a high maximum power dissipation of 25W, this transistor can handle large power loads without overheating, ensuring stable operation.

Maximum Collector-Emitter Voltage: 450 V

The high maximum collector-emitter voltage rating of 450V allows this transistor to be used in a wide range of high voltage applications.

Maximum Collector Current (IC): 2 A

Capable of handling a maximum collector current of 2A, this transistor is suitable for medium power applications where high current is required.

Nominal Transition Frequency (fT): 13 MHz

The high nominal transition frequency of 13MHz indicates that this transistor can operate at high frequencies, making it ideal for RF amplification and high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF18002 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF18002 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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