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MJF18004

Onsemi

MJF18004 by Onsemi

MJF18004 by Onsemi is a NPN BJT transistor with 35W power dissipation, 450V max collector-emitter voltage, and 5A max collector current. Ideal for switching applications, it has a min hFE of 6 and operates at up to 150 °C. The package style is flange mount with through-hole terminals.

Median Price

$1.252

Lifecycle Status

Suppliers In-Stock

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Freelance Electronics

USA . 32 parts In-Stock

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$1.315

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Digiode

USA . 1,765 parts In-Stock

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Vyrian

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J2 Sourcing AB

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ACDS - Activité Composants Distribution Service

France . 200 parts In-Stock

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LWI Electronics Inc

India . 196 parts In-Stock

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Q Components

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ECAB

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LittleDiode

UK . 21 parts In-Stock

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GES GmbH

Germany . 20 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 16 parts In-Stock

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

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R&J Components

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Donberg Electronics Ltd

Ireland . 3 parts In-Stock

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Corohmni

South Africa . 375 parts In-Stock

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Component Stockers USA

USA . 5,762 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

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Corphita

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Kulean Microsystems

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UHIMA Technologies

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Assy Fe

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Overview

Upgrade your power management systems with the Onsemi MJF18004 Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers reliable switching capabilities in a compact and durable package. With a maximum collector-emitter voltage of 450V and a peak reflow temperature of 235 °C, this transistor is perfect for a wide range of applications. Trust Onsemi for quality components that provide superior performance and efficiency. Experience the difference with the MJF18004.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient performance in such scenarios.

Maximum Power Dissipation (Abs): 35 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating.

Maximum Collector-Emitter Voltage: 450 V

Capable of handling high voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 5 A

With a high maximum collector current rating, this transistor can handle high current loads effectively.

Nominal Transition Frequency (fT): 13 MHz

The high transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF18004 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF18004 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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