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MJF18204

Onsemi

MJF18204 by Onsemi

The Onsemi MJF18204 is a NPN BJT transistor with 600V VCE, 5A IC, and 35W Ptot. Ideal for switching applications, it has a min hFE of 5 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.542

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 20 parts In-Stock

1+ parts

-

100+ parts

$0.542

1k+ parts

$0.450

10k+ parts

$0.401

20

-

$0.542

$0.450

$0.401

Distributors (In-Stock)

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Digiode

USA . 2,466 parts In-Stock

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$0.422

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$0.422

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Vyrian

USA . 4,328 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,757 parts In-Stock

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3,757

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ABC Electronics Ltd.

UK . 14 parts In-Stock

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ECAB

Sweden . 12 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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GES GmbH

Germany . 2 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,134 parts In-Stock

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$0.400

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$0.400

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Corohmni

South Africa . 423 parts In-Stock

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$0.444

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423

$0.444

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QUARKTWIN TECHNOLOGY LTD

USA . 9,964 parts In-Stock

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Kulean Microsystems

USA . 8,345 parts In-Stock

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Problanco Electronics

Mexico . 8,060 parts In-Stock

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SupplyDigital Components

Austria . 7,748 parts In-Stock

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TANS Electronics

Latvia . 6,657 parts In-Stock

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UHIMA Technologies

Türkiye . 777 parts In-Stock

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Assy Fe

Spain . 52 parts In-Stock

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Overview

Power up your next project with the MJF18204 by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for switching applications. With a maximum power dissipation of 35W and a maximum collector-emitter voltage of 600V, this NPN transistor offers reliable performance and durability. Whether you're working on industrial equipment or consumer electronics, the MJF18204 provides the value and benefits you need to bring your designs to life. Upgrade to Onsemi today and experience the difference in quality and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Suitable for a wide range of applications, especially in switching circuits.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Maximum Power Dissipation (Abs): 35 W

Capable of handling high power levels, making it suitable for demanding tasks.

Maximum Collector-Emitter Voltage: 600 V

Can withstand high voltage levels, increasing the range of possible applications.

Maximum Collector Current (IC): 5 A

Capable of handling high current levels, suitable for various tasks.

Nominal Transition Frequency (fT): 13 MHz

Provides high frequency response, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF18204 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF18204 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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