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MJF127

Onsemi

MJF127 by Onsemi

The Onsemi MJF127 is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 30W power dissipation, 2000 min hFE, and 100V VCE max. Ideal for switching applications in various industries due to its high current gain and operating temperature of up to 150 °C.

Median Price

$0.317

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 222 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.235

222

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$0.317

$0.263

$0.235

Distributors (In-Stock)

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Digiode

USA . 1,366 parts In-Stock

1+ parts

$0.247

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1,366

$0.247

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Component Electronics Inc.

Canada . 4 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

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-

4

$0.770

$0.580

$0.500

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Vyrian

USA . 5,369 parts In-Stock

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5,369

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Electronic Expediters

USA . 1,279 parts In-Stock

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Bristol Electronics

USA . 200 parts In-Stock

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Prism Electronics

USA . 40 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 39 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,753 parts In-Stock

1+ parts

$0.234

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-

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1,753

$0.234

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Corohmni

South Africa . 201 parts In-Stock

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$0.260

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201

$0.260

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QUARKTWIN TECHNOLOGY LTD

USA . 17,798 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 6,964 parts In-Stock

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SupplyDigital Components

Austria . 1,704 parts In-Stock

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Problanco Electronics

Mexico . 562 parts In-Stock

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Perfect Parts

USA . 269 parts In-Stock

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UHIMA Technologies

Türkiye . 206 parts In-Stock

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TANS Electronics

Latvia . 199 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 39 parts In-Stock

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Assy Fe

Spain . 35 parts In-Stock

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Overview

Unlock the power of your electronics with the MJF127 by Onsemi, a top-of-the-line Power Bipolar Junction Transistor. Manufactured by industry leaders, this PNP Darlington transistor with built-in diode and resistor is designed for high-performance switching applications. With a maximum power dissipation of 30W and a minimum DC current gain of 2000, this product offers unparalleled efficiency and reliability. Whether you're looking to enhance the performance of your electronic devices or optimize energy consumption, the MJF127 is the perfect solution for all your needs. Elevate your projects to the next level with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longer lifespan and reliability.

Polarity or Channel Type: PNP

Allows for high voltage switching applications, making it suitable for various electronic circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by incorporating additional components, reducing the need for external parts.

Transistor Application: SWITCHING

Designed for efficient switching operations, enabling fast response and optimal performance.

Maximum Power Dissipation (Abs): 30 W

Can handle high power loads without overheating, ensuring stable operation under heavy loads.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on circuit boards, enhancing the overall assembly process.

No. of Terminals: 3

Simplified connection setup with minimal terminals, reducing complexity during installation.

Maximum Collector Current (IC): 5 A

Capable of handling high current levels, making it suitable for power applications that require heavy load capacities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF127 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF127 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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