Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MJF122G by Onsemi is a NPN Power BJT with 30W power dissipation, 2000 min hFE, and 100V VCE. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The package style is flange mount with isolated case connection.
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Plastic/Epoxy package provides good insulation and protection for the transistor, making it durable and reliable in various environments.
NPN transistors are commonly used in amplification and switching applications, offering high efficiency and low resistance.
Darlington configuration provides high current gain and low saturation voltage, while the built-in diode and resistor simplify circuit design and reduce component count.
Designed specifically for switching applications, ensuring fast and efficient operation in control circuits.
Rectangular shape allows for easy mounting and installation in various electronic devices and equipment.
High power dissipation capability allows the transistor to handle high load conditions without overheating.
High DC current gain ensures reliable and stable amplification performance in the circuit.
Wide operating temperature range enables the transistor to operate efficiently in different environmental conditions.
High collector-emitter voltage rating provides a safety margin for the transistor to withstand voltage spikes and fluctuations.
High collector current rating allows the transistor to handle large currents, making it suitable for high-power applications.
Matte tin finish on terminals ensures good electrical connections and solderability, enhancing the reliability of the transistor.
UL recognition indicates that the transistor meets safety and performance standards, providing assurance of quality and reliability.
Power Bipolar Junction Transistors (BJT) MJF122G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Reference Standard:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
MJF122G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
PCN Assembly/Origin - Mold compound change 17/Apr/2020
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
M39029/56351
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/56351 is a CRIMP contact type backshell accessory compliant with MIL-DTL-38999. It features FEMALE gender contacts, compatible with M39029/58363 mating contacts. The insertion and removal tools required are M81969/14-10 and M22520/2-10 respectively, making it ideal for military connector applications.
LM555CN
Intersil
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
2N2222A
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
AT90CAN128-16AU
Microchip Technology
AT90CAN128-16AU by Microchip Technology is a microcontroller with 8-bit data RAM and 16-bit address bus width. It operates at a max clock frequency of 16 MHz, making it suitable for industrial applications requiring low power mode and connectivity options like CAN, SPI, and USART. With 53 I/O lines and 8-channel 10-bit ADCs, this microcontroller offers versatile peripheral support for various embedded systems.
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM107H
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
FDN5618P
Onsemi
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
BAV99
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
1N4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WSF-7
Diodes Incorporated
1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.
National Semiconductor
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
FDLL4148
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LM7805CT
Integrated Circuit Technology
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Position: SINGLE; Operating Temperature (TJ-Min): 0 Cel;
TIP31C
Changzhou Galaxy Century Microelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): FLANGE MOUNT;
MJE3055T
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
TIP127
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSFM-T3;
TIP112
Central Semiconductor
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP142T
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Terminal Finish: TIN LEAD;
TIP41C
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP120
NPN; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 1000; Maximum Collector-Emitter Voltage: 60 V;
MJD31CT4
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A; Transistor Application: SWITCHING;
TIP147
Texas Instruments
TIP147 by Texas Instruments is a PNP BJT with 125W power dissipation, 10A collector current, and 100V collector-emitter voltage. Ideal for high-power applications like motor control due to its Darlington configuration and built-in resistor. Suitable for use in environments up to 150°C with a single terminal position.
TIP115
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
General Transistor
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
MJD44H11G
MJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150°C. The small outline package with gull wing terminals makes it suitable for surface mount designs.
BDW93C
Power Innovations
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE; Case Connection: COLLECTOR;
TIP125
PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
TIP3055
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
Tt Electronics Plc
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Terminal Finish: Tin/Lead (Sn/Pb);
BDX53C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP147T
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
Rectron
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MJF15030G
The Onsemi MJF15030G is a NPN Power BJT with 50W power dissipation, 150V max collector-emitter voltage, and 8A max collector current. Ideal for switching applications, it has a min hFE of 20 and operates up to 150°C. The transistor comes in a flange mount package with UL recognition.
MJF127G
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 2000;
MJF122
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 5 A;
MJF127
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 5 A;
MJF13007
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 14 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;
MJF15030
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;
MJF15031
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;
MJF15031G
MJF18002
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 13 MHz; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 2 A;
MJF18004
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 13 MHz; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 5 A;
MJF18004G
MJF18006
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 14 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 6 A;
MJF18008
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 13 MHz; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 8 A;
MJF18008G
MJF18009
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 12 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
MJF18204
MJF18206
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 13 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 8 A;
New England Semiconductor
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 5 A; Terminal Form: PIN/PEG;
Microsemi
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: S-MSFM-P3; Qualification: Not Qualified;
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