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MJF122

Onsemi

MJF122 by Onsemi

MJF122 by Onsemi is a NPN BJT transistor with Darlington configuration, built-in diode and resistor. It has a max power dissipation of 30W, hFE of 2000, and operates up to 150 °C. Ideal for switching applications due to its high collector current of 5A and collector-emitter voltage of 100V.

Median Price

$0.317

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.235

3

-

$0.317

$0.263

$0.235

Distributors (In-Stock)

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Digiode

USA . 953 parts In-Stock

1+ parts

$0.247

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953

$0.247

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Bristol Electronics

USA . 42 parts In-Stock

1+ parts

$1.500

100+ parts

$0.600

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42

$1.500

$0.600

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Vyrian

USA . 3,354 parts In-Stock

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J2 Sourcing AB

Sweden . 40 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Microfarads

USA . 25 parts In-Stock

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Inventory MP

USA . 24 parts In-Stock

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Semi Source

USA . 22 parts In-Stock

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LWI Electronics Inc

India . 20 parts In-Stock

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MRC Electronics

USA . 18 parts In-Stock

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Component Electronics Inc.

Canada . 7 parts In-Stock

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Prism Electronics

USA . 4 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,832 parts In-Stock

1+ parts

$0.234

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$0.234

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Corohmni

South Africa . 464 parts In-Stock

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$0.260

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464

$0.260

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Component Stockers USA

USA . 5,996 parts In-Stock

1+ parts

$0.270

100+ parts

$1.620

1k+ parts

$1.570

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5,996

$0.270

$1.620

$1.570

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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SupplyDigital Components

Austria . 8,174 parts In-Stock

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Kulean Microsystems

USA . 5,884 parts In-Stock

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TANS Electronics

Latvia . 2,132 parts In-Stock

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Problanco Electronics

Mexico . 1,449 parts In-Stock

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UHIMA Technologies

Türkiye . 185 parts In-Stock

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Perfect Parts

USA . 72 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 30 parts In-Stock

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Overview

Experience the power and reliability of the MJF122 by Onsemi, a top-quality Power BJT designed for switching applications. With its durable plastic/epoxy package and NPN polarity, this transistor offers seamless performance and efficiency. The unique Darlington configuration with built-in diode and resistor sets it apart from the competition, providing customers with a versatile solution for their electronic needs. From its high DC current gain to its impressive operating temperature range, the MJF122 delivers exceptional value and benefits that meet the demands of today's technology-driven world. Discover the difference with Onsemi's MJF122 - your gateway to enhanced functionality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor versatile and compatible with many electronic circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and allows for use in high power switching circuits. The built-in diode and resistor add convenience and simplify circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient and reliable performance in turning on and off electronic circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and placement on circuit boards, optimizing space efficiency.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure and stable connections, making it easier for manual soldering and ensuring reliability in circuit connections.

Maximum Power Dissipation (Abs): 30 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 2000

The high minimum DC current gain ensures consistent and stable amplification of current, making the transistor reliable in various operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate in a wide range of temperature environments, ensuring stability and reliability.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating allows the transistor to handle high voltage levels, making it versatile and suitable for various circuit designs.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in electronic devices, making this transistor a dependable choice for electronic applications.

Maximum Collector Current (IC): 5 A

With a high maximum collector current rating, this transistor can handle high current levels, making it suitable for power switching applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and corrosion resistance, providing durable and reliable connections in electronic circuits.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making the transistor easy to integrate into circuit designs.

Case Connection: ISOLATED

The isolated case connection helps in preventing electrical interference and ensures safe operation in various circuit configurations.

Peak Reflow Temperature °C: 235

The high peak reflow temperature allows for proper soldering and reworking of the transistor, ensuring secure connections in electronic assemblies.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies that the transistor meets safety and performance standards set by Underwriters Laboratories, ensuring high quality and compliance with industry regulations.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency indicates fast switching speed, making the transistor suitable for high-frequency applications where quick response is essential.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF122 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF122 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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