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MJF18004G

Onsemi

MJF18004G by Onsemi

The Onsemi MJF18004G is a NPN BJT transistor with 450V VCEO and 5A IC, ideal for switching applications. With a max power dissipation of 35W and hFE of 6, it operates up to 150°C. Its rectangular package style with flange mount is UL recognized for isolated case connection.

Median Price

$1.752

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 900 parts In-Stock

1+ parts

$2.160

100+ parts

$0.958

1k+ parts

$0.710

10k+ parts

$0.695

900

$2.160

$0.958

$0.710

$0.695

DigiKey

USA . 3,786 parts In-Stock

1+ parts

$2.700

100+ parts

$1.198

1k+ parts

$0.889

10k+ parts

$0.793

3,786

$2.700

$1.198

$0.889

$0.793

Mouser Electronics

USA . 806 parts In-Stock

1+ parts

$2.700

100+ parts

$1.190

1k+ parts

$0.825

10k+ parts

$0.793

806

$2.700

$1.190

$0.825

$0.793

Arrow

USA . 700 parts In-Stock

1+ parts

-

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$0.849

10k+ parts

$0.787

700

-

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$0.849

$0.787

Verical

USA . 400 parts In-Stock

1+ parts

-

100+ parts

$1.343

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400

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$1.343

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Flip Electronics (Authorized)

USA . 200 parts In-Stock

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200

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Rochester

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$1.070

1k+ parts

$0.892

10k+ parts

$0.795

150

-

$1.070

$0.892

$0.795

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 76 parts In-Stock

1+ parts

$0.837

100+ parts

-

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-

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76

$0.837

-

-

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Vyrian

USA . 125 parts In-Stock

1+ parts

$0.849

100+ parts

-

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-

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125

$0.849

-

-

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TME

Poland . 88 parts In-Stock

1+ parts

$2.530

100+ parts

$1.210

1k+ parts

-

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88

$2.530

$1.210

-

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Flip Electronics

USA . 200 parts In-Stock

1+ parts

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200

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EMSNET

USA . 100 parts In-Stock

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100

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Huijzer Components

Netherlands . 50 parts In-Stock

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50

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ACDS - Activité Composants Distribution Service

France . 9 parts In-Stock

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9

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Holdelec - ElecDif-Pro

France . 9 parts In-Stock

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9

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Distributors (Availability)

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Ampacity Inc.

Singapore . 150 parts In-Stock

1+ parts

$0.720

100+ parts

-

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150

$0.720

-

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Corphita

USA . 1,188 parts In-Stock

1+ parts

$0.793

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1,188

$0.793

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Corohmni

South Africa . 352 parts In-Stock

1+ parts

$0.849

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352

$0.849

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Continental Prestige Electronics

USA . 346 parts In-Stock

1+ parts

$1.380

100+ parts

$0.999

1k+ parts

-

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346

$1.380

$0.999

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Perfect Parts

USA . 50,811 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,405 parts In-Stock

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SupplyDigital Components

Austria . 7,076 parts In-Stock

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Lixinc

USA . 6,495 parts In-Stock

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Problanco Electronics

Mexico . 5,284 parts In-Stock

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Kepictronics

USA . 3,018 parts In-Stock

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TANS Electronics

Latvia . 2,475 parts In-Stock

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2,475

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Kulean Microsystems

USA . 2,089 parts In-Stock

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2,089

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UHIMA Technologies

Türkiye . 678 parts In-Stock

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678

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Authorized Procurement Solutions

USA . 400 parts In-Stock

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400

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Assy Fe

Spain . 1 parts In-Stock

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1

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Overview

Unlock the power of seamless switching with the MJF18004G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). Ideal for various applications, this NPN transistor offers customers unmatched value and benefits. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 450V, the MJF18004G provides the performance and efficiency needed for your projects. Upgrade to Onsemi for superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and allows for easy integration into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Maximum Power Dissipation (Abs): 35 W

Can handle high power levels without the risk of overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 450 V

Can withstand high voltage levels, adding to the versatility of this transistor.

Maximum Collector Current (IC): 5 A

Capable of handling high currents, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 13 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF18004G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF18004G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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