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D44C12G

Onsemi

D44C12G by Onsemi

D44C12G by Onsemi is a NPN Power BJT with 80V VCEO, 4A IC, and 30W Ptot. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The transistor comes in a plastic package with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,053 parts In-Stock

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Digiode

USA . 1,881 parts In-Stock

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Native Components

USA . 182 parts In-Stock

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$11.420

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Northwest PG Solutions

USA . 1,119 parts In-Stock

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$12.562

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$11.306

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Ampacity Inc.

Singapore . 279 parts In-Stock

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$18.050

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279

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AZTECH Wire

Italy . 282 parts In-Stock

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$20.980

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QUARKTWIN TECHNOLOGY LTD

USA . 24,093 parts In-Stock

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Problanco Electronics

Mexico . 8,173 parts In-Stock

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Kulean Microsystems

USA . 5,960 parts In-Stock

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SupplyDigital Components

Austria . 5,393 parts In-Stock

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TANS Electronics

Latvia . 4,677 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Corphita

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Kepictronics

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Corohmni

South Africa . 346 parts In-Stock

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UHIMA Technologies

Türkiye . 261 parts In-Stock

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Overview

Power up your electronics with the D44C12G by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum power dissipation of 30W and a maximum collector-emitter voltage of 80V, this NPN transistor ensures reliable performance and efficiency. Its flange mount package shape and through-hole terminal form make it easy to integrate into your projects. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and experience seamless operation with the D44C12G. Upgrade your devices today with this high-performance transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making this transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching applications and this type provides efficient operation in various circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to incorporate this transistor into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast operation and high efficiency when used in circuitry.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and positioning within electronic devices, aiding in installation and use.

Terminal Form: THROUGH-HOLE

The through-hole terminal form is reliable and sturdy, ensuring secure connections and stable performance in various environments.

No. of Terminals: 3

With 3 terminals, this transistor allows for simple and effective connections, enabling efficient circuitry and easy integration.

Maximum Power Dissipation (Abs): 30 W

With a maximum power dissipation of 30 W, this transistor can handle high power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting and heat dissipation, ensuring reliable performance under challenging conditions.

Minimum DC Current Gain (hFE): 20

With a minimum DC current gain of 20, this transistor provides amplification of input signals, enabling efficient signal processing in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for use in industrial settings.

Maximum Collector-Emitter Voltage: 80 V

The maximum collector-emitter voltage of 80 V allows for safe operation within specified voltage ranges, ensuring reliability in circuitry.

Transistor Element Material: SILICON

The silicon material of the transistor element provides high performance and reliability, making this transistor a durable and efficient choice.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish: TIN

The tin terminal finish ensures good conductivity and corrosion resistance, allowing for reliable connections and long-term performance.

Terminal Position: SINGLE

The single terminal position simplifies installation and connections, making it easy to incorporate this transistor into circuitry.

Case Connection: COLLECTOR

The case connection at the collector provides efficient heat dissipation and electrical conduction, ensuring stable performance under demanding conditions.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high temperatures during soldering processes, ensuring reliable connections.

Nominal Transition Frequency (fT): 40 MHz

The nominal transition frequency of 40 MHz indicates high-speed operation, making this transistor suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C12G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D44C12G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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