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D44C7

STMicroelectronics

D44C7 by STMicroelectronics

STMicroelectronics D44C7 is a NPN BJT transistor with VCEsat of 0.5V, IC of 4A, and hFE of 10. Ideal for switching applications, it has a max power dissipation of 30W at 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.

Median Price

$19.270

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 50 parts In-Stock

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American Microsemiconductor Inc.

USA . 5 parts In-Stock

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$19.270

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5

$19.270

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Digiode

USA . 4,604 parts In-Stock

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Vyrian

USA . 3,826 parts In-Stock

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Anansix

USA . 3,635 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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Electronic Expediters

USA . 38 parts In-Stock

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IDEA Electronic Components Group

UK . 2,213 parts In-Stock

1+ parts

$0.614

100+ parts

-

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$0.552

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2,213

$0.614

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$0.552

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Native Components

USA . 367 parts In-Stock

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$0.631

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367

$0.631

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Northwest PG Solutions

USA . 983 parts In-Stock

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$0.694

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983

$0.694

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MKK Technologies

India . 2,086 parts In-Stock

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$1.154

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DigiPath Technology Company

USA . 2,086 parts In-Stock

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$1.154

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Corphita

USA . 2,864 parts In-Stock

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Supply Digital

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Parana Technologies

USA . 753 parts In-Stock

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$0.734

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753

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$0.734

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Assy Fe

Spain . 20 parts In-Stock

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Overview

Unleash the power of innovation with the D44C7 by STMicroelectronics, a high-quality Power BJT transistor perfect for switching applications. Manufactured by industry leader STMicroelectronics, this NPN transistor offers a low VCEsat of 0.5V and a maximum collector current of 4A. With a package style of flange mount and through-hole terminals, it provides easy integration into your designs. Ideal for various electronic projects, the D44C7 delivers exceptional performance and reliability, ensuring maximum efficiency and durability. Upgrade your creations with the D44C7 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient performance.

Maximum VCEsat: 0.5 V

Low VCEsat ensures minimal power loss and efficient operation of the transistor.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connection points and easy soldering during assembly.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability allows the transistor to handle large loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers mechanical stability and easy installation in various applications.

Maximum Power Dissipation Ambient: 30 W

The transistor can dissipate up to 30 W of power in ambient conditions without thermal issues.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures reliable amplification and signal processing capabilities.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures in industrial settings.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating allows for safe operation in high voltage circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various electronic applications.

Maximum Collector Current (IC): 4 A

The transistor can handle up to 4 A of collector current, making it suitable for medium power applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures secure connections with other circuit components.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and reduces the chances of wiring errors.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency enables fast signal switching and amplification in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C7 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

D44C7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-00-315-2018, 5961003152018

NIIN

003152018

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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