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D44C6

STMicroelectronics

D44C6 by STMicroelectronics

D44C6 by STMicroelectronics is a NPN BJT transistor with max VCEsat of 0.5V, IC of 4A, and hFE of 20. Ideal for switching applications, it has a max power dissipation of 30W and operates up to 150 °C. Its package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.740

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 362 parts In-Stock

1+ parts

-

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$0.740

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$0.614

10k+ parts

$0.547

362

-

$0.740

$0.614

$0.547

DigiKey

USA . 50 parts In-Stock

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-

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50

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Digiode

USA . 4,378 parts In-Stock

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$0.577

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$0.577

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American Microsemiconductor Inc.

USA . 494 parts In-Stock

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$8.120

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Vyrian

USA . 3,385 parts In-Stock

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3,385

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Electronic Expediters

USA . 2,430 parts In-Stock

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Anansix

USA . 2,402 parts In-Stock

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Sogenti Electronics

Canada . 1,110 parts In-Stock

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ICP Electronique

France . 63 parts In-Stock

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Pride Electronics

USA . 50 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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MISTER SPROCKETS

USA . 22 parts In-Stock

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Lakeland Logistics Inc

USA . 5 parts In-Stock

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Bristol Electronics

USA . 5 parts In-Stock

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Native Components

USA . 660 parts In-Stock

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$0.350

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$0.336

660

$0.350

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$0.336

Northwest PG Solutions

USA . 1,861 parts In-Stock

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$0.385

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$0.339

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$0.385

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$0.339

Corphita

USA . 3,569 parts In-Stock

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$0.546

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$0.546

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IDEA Electronic Components Group

UK . 420 parts In-Stock

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$0.891

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$0.802

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MKK Technologies

India . 1,747 parts In-Stock

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$1.676

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$1.676

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DigiPath Technology Company

USA . 1,747 parts In-Stock

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$1.676

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$1.676

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Microchip USA

USA . 5,753 parts In-Stock

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$3.770

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QUARKTWIN TECHNOLOGY LTD

USA . 12,081 parts In-Stock

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Parana Technologies

USA . 1,894 parts In-Stock

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$1.066

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Supply Digital

USA . 726 parts In-Stock

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Infinite Electronics LLP (Excess)

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Overview

Unleash the power of reliable and efficient electronics with the D44C6 Power Bipolar Junction Transistor by STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics brings you a high-quality NPN transistor that is perfect for switching applications. With a maximum VCEsat of just 0.5V and a maximum collector current of 4A, this transistor offers exceptional performance and reliability. Whether you're designing consumer electronics, automotive systems, or industrial machinery, the D44C6 provides the value, benefits, and advantages you need to bring your projects to life. Trust STMicroelectronics for all your transistor needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Helps in providing good thermal insulation and electrical isolation, leading to better performance and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits due to their easy availability and versatility.

Configuration: SINGLE

Simplified circuit design and easy integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications ensuring efficient and quick operation.

Maximum VCEsat: 0.5 V

Low saturation voltage results in less power dissipation and improved efficiency.

Package Shape: RECTANGULAR

Compact design allows for easy mounting and space-saving in electronic devices.

Terminal Form: THROUGH-HOLE

Suitable for through-hole PCB mounting which provides mechanical stability and ease of soldering.

No. of Terminals: 3

Simple interface with external circuits and components.

Maximum Power Dissipation (Abs): 30 W

Capability to handle high power dissipation ensuring reliability in demanding applications.

Maximum Power Dissipation Ambient: 30 W

Can operate efficiently in ambient conditions without overheating.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures stable amplification of input signal.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 45 V

Can handle relatively high voltage levels safely.

Transistor Element Material: SILICON

Silicon material provides good electrical conductivity and durability.

Maximum Collector Current (IC): 4 A

Capable of handling up to 4 Amps of collector current, suitable for medium power applications.

Terminal Finish: TIN LEAD

Tin-lead finish ensures good solderability and long-term reliability of connections.

Terminal Position: SINGLE

Single terminal position for easy connectivity and hassle-free integration.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for high-speed switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C6 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

D44C6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-00-365-9537, 5961003659537

NIIN

003659537

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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