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D44C9

STMicroelectronics

D44C9 by STMicroelectronics

STMicroelectronics D44C9 is a NPN BJT transistor with VCEsat of 0.5V, IC of 4A, and hFE of 20. Ideal for switching applications, it has a max power dissipation of 30W at 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$1.829

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 5,055 parts In-Stock

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Anansix

USA . 4,994 parts In-Stock

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Halfin

Belgium . 1,254 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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700

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ACDS - Activité Composants Distribution Service

France . 650 parts In-Stock

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650

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Bristol Electronics

USA . 650 parts In-Stock

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$1.829

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$1.607

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650

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$1.829

$1.607

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Dan-Mar Components

USA . 650 parts In-Stock

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650

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Vyrian

USA . 186 parts In-Stock

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LWI Electronics Inc

India . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 1,226 parts In-Stock

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$0.386

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$0.348

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$0.386

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$0.348

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MKK Technologies

India . 1,192 parts In-Stock

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$0.727

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$0.727

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DigiPath Technology Company

USA . 1,192 parts In-Stock

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$0.727

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$0.727

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AZTECH Wire

Italy . 688 parts In-Stock

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$14.552

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Ampacity Inc.

Singapore . 1,155 parts In-Stock

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$58.050

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QUARKTWIN TECHNOLOGY LTD

USA . 15,401 parts In-Stock

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Corphita

USA . 4,171 parts In-Stock

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Parana Technologies

USA . 1,341 parts In-Stock

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$0.462

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Supply Digital

USA . 1,043 parts In-Stock

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Assy Fe

Spain . 380 parts In-Stock

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380

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Bastille Electronics

Australia . 130 parts In-Stock

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Overview

Experience the superior performance and reliability of the D44C9 Power BJT by STMicroelectronics. This high-quality transistor is perfect for switching applications, offering a maximum VCEsat of 0.5V and a maximum power dissipation of 30W. With a single configuration and NPN polarity, this transistor provides efficient power control in a compact rectangular package. Trust STMicroelectronics' expertise and innovation to deliver a product that exceeds expectations. Upgrade your electronic projects with the D44C9 and enjoy the benefits of enhanced power management and optimized performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and have fast response times, making this transistor efficient for switching operations.

Configuration: SINGLE

Simplified and easy to use in circuits, suitable for applications where a single transistor is required.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in switching circuits.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in reducing power dissipation and improving efficiency of the transistor.

Package Shape: RECTANGULAR

Compact and space-saving design for easy integration into circuit boards.

Terminal Form: THROUGH-HOLE

Provides secure and reliable connections on the circuit board, making it suitable for through-hole soldering.

No. of Terminals: 3

Simplified connection setup with three terminals, ideal for basic circuit configurations.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability allows the transistor to handle heavy loads and high power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical strength and ease of mounting for industrial applications.

Maximum Power Dissipation Ambient: 30 W

Efficiently dissipates heat generated during operation, ensuring reliable performance under varying ambient conditions.

Minimum DC Current Gain (hFE): 20

High DC current gain ensures amplification of input signals and stable operation in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 60 V

High breakdown voltage rating ensures the transistor can handle higher voltage levels without damage.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the transistor element, ensuring consistent operation over time.

Maximum Collector Current (IC): 4 A

High collector current rating enables the transistor to handle high current loads in circuits.

Terminal Finish: TIN LEAD

Tin lead finish on terminals ensures good solderability and reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connections, ideal for straightforward circuit designs.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows the transistor to switch rapidly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C9 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

D44C9 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-064-4202, 5961010644202

NIIN

010644202

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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