Loading...

D44C11

STMicroelectronics

D44C11 by STMicroelectronics

D44C11 by STMicroelectronics is a NPN BJT transistor with max VCEsat of 0.5V, IC of 4A, and hFE of 20. It is used for switching applications in circuits requiring up to 30W power dissipation at a max temperature of 150°C. The transistor comes in a rectangular package with through-hole terminals ideal for flange mount installations.

Median Price

$0.528

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.528

10k+ parts

-

124

-

-

$0.528

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,090 parts In-Stock

1+ parts

$0.541

100+ parts

-

1k+ parts

-

10k+ parts

-

4,090

$0.541

-

-

-

DigiKey Marketplace

USA . 132 parts In-Stock

1+ parts

$1.520

100+ parts

$1.260

1k+ parts

-

10k+ parts

-

132

$1.520

$1.260

-

-

American Microsemiconductor Inc.

USA . 750 parts In-Stock

1+ parts

$12.450

100+ parts

-

1k+ parts

-

10k+ parts

-

750

$12.450

-

-

-

Vyrian

USA . 6,240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,240

-

-

-

-

Anansix

USA . 2,388 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,388

-

-

-

-

Semi Source

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

200

-

-

-

-

Component Sense

UK . 181 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

181

-

-

-

-

Prism Electronics

USA . 116 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

116

-

-

-

-

Lantek

USA . 31 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

31

-

-

-

-

DF Sales Co.

USA . 23 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23

-

-

-

-

DF Sales Co.

USA . 23 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23

-

-

-

-

R&J Components

USA . 18 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18

-

-

-

-

Mil-Aero Solutions, Inc.

USA . 16 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16

-

-

-

-

M&R Communications

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Sunrise Surplus Inc.

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

Legend Electronics Inc.

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,869 parts In-Stock

1+ parts

$0.512

100+ parts

-

1k+ parts

-

10k+ parts

-

4,869

$0.512

-

-

-

Continental Prestige Electronics

USA . 124 parts In-Stock

1+ parts

$0.627

100+ parts

$0.592

1k+ parts

-

10k+ parts

-

124

$0.627

$0.592

-

-

IDEA Electronic Components Group

UK . 1,437 parts In-Stock

1+ parts

$1.101

100+ parts

-

1k+ parts

$0.991

10k+ parts

-

1,437

$1.101

-

$0.991

-

MKK Technologies

India . 1,901 parts In-Stock

1+ parts

$2.071

100+ parts

-

1k+ parts

-

10k+ parts

-

1,901

$2.071

-

-

-

DigiPath Technology Company

USA . 1,901 parts In-Stock

1+ parts

$2.071

100+ parts

-

1k+ parts

-

10k+ parts

-

1,901

$2.071

-

-

-

Microchip USA

USA . 8,480 parts In-Stock

1+ parts

$9.880

100+ parts

-

1k+ parts

-

10k+ parts

-

8,480

$9.880

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 19,018 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,018

-

-

-

-

Supply Digital

USA . 2,635 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,635

-

-

-

-

Parana Technologies

USA . 2,333 parts In-Stock

1+ parts

-

100+ parts

$1.317

1k+ parts

-

10k+ parts

-

2,333

-

$1.317

-

-

Northwest PG Solutions

USA . 860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

860

-

-

-

-

Perfect Parts

USA . 130 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

130

-

-

-

-

Native Components

USA . 58 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

58

-

-

-

-

GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

SIE Connect GmbH (Excess)

Germany . 24 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24

-

-

-

-

Assy Fe

Spain . 15 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15

-

-

-

-

Overview

Unleash the power of innovation with the D44C11 by STMicroelectronics! As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power BJT transistors that are perfect for switching applications. With a maximum VCEsat of just 0.5V and a maximum collector current of 4A, this NPN transistor offers unparalleled performance and reliability. Whether you're designing consumer electronics, industrial equipment, or automotive systems, the D44C11 provides the efficiency and power you need to take your projects to the next level. Choose STMicroelectronics for cutting-edge technology and superior quality in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Epoxy material provides excellent protection and insulation for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high efficiency and fast response times.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to work with.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering high performance and efficiency in these scenarios.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates minimal power loss and heat generation, enhancing overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic devices or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering for reliable circuit connections.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections and design applications.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability ensures the transistor can handle demanding loads and operating conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount style enables easy and secure installation of the transistor in a circuit or system.

Maximum Power Dissipation Ambient: 30 W

Ability to dissipate 30W of power in ambient conditions ensures stability and reliability under varying temperatures.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain value of 20 indicates good amplification capabilities for various signal types.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows for reliable performance in extreme conditions.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating of 80V provides a wide operating range for different applications.

Transistor Element Material: SILICON

Silicon material offers high efficiency, reliability, and performance in transistor operation.

Maximum Collector Current (IC): 4 A

High collector current rating of 4A enables the transistor to handle high power loads and currents.

Terminal Finish: TIN LEAD

Tin-lead finish on terminals ensures good conductivity and solderability for secure connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and layout, enhancing overall design efficiency.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency of 50MHz indicates fast response times and high-frequency operation capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C11 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

D44C11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-067-7941, 5961010677941

NIIN

010677941

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20