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D44C8

Onsemi

D44C8 by Onsemi

The Onsemi D44C8 is a NPN BJT transistor with max VCEsat of 0.5V, IC of 4A, and hFE of 20. Ideal for amplifier applications, it has a max power dissipation of 60W and operates b/w -55 to 150 °C. Its package style is flange mount with through-hole terminals.

Median Price

$0.895

Lifecycle Status

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23

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Component Electronics Inc.

Canada . 25 parts In-Stock

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Galco

USA . 31 parts In-Stock

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Anansix

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Digiode

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Vyrian

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Flip Electronics

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ACDS - Activité Composants Distribution Service

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ECAB

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A2Z Electronics, Inc.

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Bristol Electronics

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ComSIT Distribution GmbH

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R&J Components

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PC Components Company LLC

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DigiKey Marketplace

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PUI

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Mil-Aero Solutions, Inc.

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Microfarads

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Sogenti Electronics

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Prism Electronics

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Electronic Expediters

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LittleDiode

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MISTER SPROCKETS

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Corohmni

South Africa . 385 parts In-Stock

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Native Components

USA . 496 parts In-Stock

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Northwest PG Solutions

USA . 2,758 parts In-Stock

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IDEA Electronic Components Group

UK . 312 parts In-Stock

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MKK Technologies

India . 1,752 parts In-Stock

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DigiPath Technology Company

USA . 1,752 parts In-Stock

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Andel Nordic

Denmark . 3,453 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,147 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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Corphita

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Glotronic Ltd.

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TANS Electronics

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Perfect Parts

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Supply Digital

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Parana Technologies

USA . 1,603 parts In-Stock

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UHIMA Technologies

Türkiye . 196 parts In-Stock

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Component Stockers USA

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Assy Fe

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Overview

Experience the power of innovation with the D44C8 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that offer exceptional performance and reliability. Ideal for amplifier applications, this NPN transistor boasts a maximum VCEsat of only 0.5V, ensuring efficiency and effectiveness. With a maximum collector-emitter voltage of 60V and a maximum collector current of 4A, the D44C8 provides the perfect balance of power and versatility. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the D44C8 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to integrate this transistor into electronic devices.

Maximum VCEsat: 0.5 V

The low saturation voltage of 0.5V reduces power losses and improves efficiency in amplifier applications.

Maximum Power Dissipation: 60 W

With a high power dissipation of 60W, this transistor can handle high power loads, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 60 V

The high voltage rating of 60V allows this transistor to handle high voltage circuits, increasing its versatility.

Nominal Transition Frequency (fT): 40 MHz

The high transition frequency of 40MHz enables this transistor to operate at high speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C8 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Base Capacitance:

100 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

60 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

D44C8 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-00-146-3943, 5961001463943

NIIN

001463943

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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