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D44C5

STMicroelectronics

D44C5 by STMicroelectronics

STMicroelectronics D44C5 is a NPN BJT transistor with VCEsat of 0.5V, IC of 4A, and hFE of 20. Ideal for switching applications, it has a max power dissipation of 30W and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.500

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

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DigiKey Marketplace

USA . 90 parts In-Stock

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$0.500

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Anansix

USA . 4,752 parts In-Stock

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Vyrian

USA . 4,488 parts In-Stock

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Digiode

USA . 4,210 parts In-Stock

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Electronic Expediters

USA . 2,915 parts In-Stock

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ECAB

Sweden . 1,556 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 127 parts In-Stock

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R&J Components

USA . 22 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 16 parts In-Stock

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ABC Electronics Ltd.

UK . 16 parts In-Stock

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LittleDiode

UK . 8 parts In-Stock

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Tech-Mark Corp

USA . 6 parts In-Stock

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NAC Semi

USA . 3 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,185 parts In-Stock

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$1.688

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$1.519

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Northwest PG Solutions

USA . 160 parts In-Stock

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$2.868

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MKK Technologies

India . 2,108 parts In-Stock

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$3.175

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DigiPath Technology Company

USA . 2,108 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,700 parts In-Stock

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Corphita

USA . 2,815 parts In-Stock

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Supply Digital

USA . 1,637 parts In-Stock

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Parana Technologies

USA . 1,094 parts In-Stock

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$2.018

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Native Components

USA . 887 parts In-Stock

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$2.529

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Overview

Experience the superior performance and reliability of the D44C5 Power Bipolar Junction Transistor by STMicroelectronics. Designed for switching applications, this NPN transistor offers a maximum VCEsat of just 0.5V and a maximum collector current of 4A, ensuring efficient power management. With a package style of flange mount and a terminal form of through-hole, this transistor is easy to install and use. Trust in STMicroelectronics' reputation for quality and innovation, and unlock the potential of your electronics projects with the D44C5.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for the package, providing good protection for the internal components.

Polarity or Channel Type: NPN

Common NPN type for general purpose applications, easily integrated into circuits.

Configuration: SINGLE

Simplified design with single transistor configuration, easy to use and integrate.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in such tasks.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates minimal voltage drop when the transistor is in the on state, leading to higher efficiency.

Package Shape: RECTANGULAR

Compact rectangular shape for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and allow for easy soldering onto PCBs.

No. of Terminals: 3

Simple 3-terminal configuration for easy connectivity in circuits.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability allows for handling of demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style for secure mounting and heat dissipation in various environments.

Maximum Power Dissipation Ambient: 30 W

Specified maximum power dissipation under ambient conditions, ensuring reliable performance in different operating environments.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain value ensures stable and consistent amplification in various circuits.

Maximum Operating Temperature: 150 °C

Wide temperature range for operation, suitable for a variety of operating conditions.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating for safe operation in circuits with high voltages.

Transistor Element Material: SILICON

Reliable silicon material for the transistor element, ensuring long-term performance and stability.

Maximum Collector Current (IC): 4 A

High collector current capability for handling higher current loads in circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish for good solderability and conductivity in circuit connections.

Terminal Position: SINGLE

Single terminal position for easy installation and connection in circuits.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency for fast switching and response in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C5 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

D44C5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-00-357-3491, 5961003573491

NIIN

003573491

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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