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D44C12

Onsemi

D44C12 by Onsemi

D44C12 by Onsemi is a NPN BJT transistor with 80V VCE, 4A IC, and 30W Ptot. Ideal for switching applications, it has a min hFE of 20 and operates up to 140 °C. Its through-hole package style makes it suitable for various electronic designs.

Median Price

$0.531

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Freelance Electronics

USA . 5 parts In-Stock

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J2 Sourcing AB

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Digiode

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Corohmni

South Africa . 437 parts In-Stock

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Northwest PG Solutions

USA . 1,350 parts In-Stock

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Native Components

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IDEA Electronic Components Group

UK . 1,172 parts In-Stock

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MKK Technologies

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DigiPath Technology Company

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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Overview

Elevate your power control solutions with the D44C12 by Onsemi. Crafted with precision and expertise, this Power BJT transistor offers superior performance and reliability. Perfect for switching applications, this NPN transistor boasts a maximum collector-emitter voltage of 80V and a maximum collector current of 4A. With a flange mount package style and a nominal transition frequency of 40MHz, the D44C12 delivers exceptional value and versatility. Trust Onsemi for cutting-edge technology and elevate your projects to new heights with the D44C12.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and widely applicable.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various electronics projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and efficient performance when used in circuits that require rapid on/off switching.

Maximum Power Dissipation (Abs): 30 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating, ensuring long-term reliability.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows this transistor to be used in circuits with higher voltage requirements, increasing its versatility.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency enables fast switching speeds and high-frequency performance, making this transistor suitable for demanding applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C12 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D44C12 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-00-324-2989, 5961003242989

NIIN

003242989

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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