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D44C10

STMicroelectronics

D44C10 by STMicroelectronics

STMicroelectronics D44C10 is a NPN BJT transistor with VCEsat of 0.5V, IC of 4A, and hFE of 10. Ideal for switching applications, it has a max power dissipation of 30W and operates up to 150 °C. Package style is flange mount with through-hole terminals.

Median Price

$2.970

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 1,322 parts In-Stock

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$2.970

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Vyrian

USA . 3,967 parts In-Stock

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Anansix

USA . 2,996 parts In-Stock

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Digiode

USA . 876 parts In-Stock

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J & M Industries LLC

USA . 870 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 566 parts In-Stock

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Carlin Systems, Inc.

USA . 500 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 926 parts In-Stock

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$0.093

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$0.089

926

$0.093

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$0.089

Northwest PG Solutions

USA . 2,050 parts In-Stock

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$0.102

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$0.090

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$0.102

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$0.090

IDEA Electronic Components Group

UK . 94 parts In-Stock

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$1.690

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$1.521

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94

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MKK Technologies

India . 2,037 parts In-Stock

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$3.178

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DigiPath Technology Company

USA . 2,037 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,439 parts In-Stock

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Corphita

USA . 4,776 parts In-Stock

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Parana Technologies

USA . 1,962 parts In-Stock

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$2.021

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Supply Digital

USA . 1,770 parts In-Stock

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Metaverse IC Inc.

Canada . 1,092 parts In-Stock

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Overview

Discover the power of the D44C10 by STMicroelectronics, a top-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum VCEsat of just 0.5V and a high DC current gain of 10, this NPN transistor offers efficient performance and reliability. Ideal for a wide range of electronics projects, the D44C10 boasts a maximum collector current of 4A and a maximum power dissipation of 30W. Trust in STMicroelectronics' expertise and elevate your designs with the D44C10 - the perfect choice for seamless switching solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides good insulation and protection for the transistor, increasing its durability and reliability.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplifying and switching applications, making this transistor versatile in various electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making it easier to integrate this transistor into electronic projects.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor can handle high-speed switching operations efficiently.

Maximum VCEsat: 0.5 V

Low VCEsat voltage minimizes power losses in the transistor during operation, leading to higher efficiency.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and soldering onto circuit boards, facilitating the assembly process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board, ensuring stable performance in various environments.

Maximum Power Dissipation (Abs): 30 W

High absolute power dissipation rating allows the transistor to handle high-power applications without risk of overheating or damage.

Maximum Collector-Emitter Voltage: 80 V

High VCEO rating enables the transistor to sustain high voltage levels, expanding its range of compatible applications.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle high current loads, making it suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C10 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

D44C10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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