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D44C

Onsemi

D44C by Onsemi

D44C by Onsemi is a NPN Power BJT with 80V VCE, 4A IC, and 30W Ptot. Ideal for switching applications, it has a hFE of 20, fT of 40MHz, and can operate up to 150 °C. The package is through-hole with a flange mount style suitable for collector connections.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,258 parts In-Stock

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Native Components

USA . 616 parts In-Stock

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$0.658

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Northwest PG Solutions

USA . 987 parts In-Stock

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SupplyDigital Components

Austria . 8,248 parts In-Stock

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Problanco Electronics

Mexico . 2,838 parts In-Stock

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TANS Electronics

Latvia . 1,298 parts In-Stock

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UHIMA Technologies

Türkiye . 923 parts In-Stock

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Corohmni

South Africa . 441 parts In-Stock

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Corphita

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Kulean Microsystems

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Overview

Upgrade your electronic projects with the high-quality D44C Power Bipolar Junction Transistor by Onsemi. This NPN transistor is perfect for switching applications, offering a maximum collector current of 4A and a nominal transition frequency of 40MHz. With a maximum operating temperature of 150 °C, this transistor delivers reliable performance in a range of settings. Trust the expertise of Onsemi to provide durable components that enhance the efficiency of your designs. Experience the benefits of exceptional power dissipation, versatility, and reliability with the D44C.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring its durability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this transistor versatile and widely compatible.

Maximum Power Dissipation (Abs): 30 W

With a high maximum power dissipation, this transistor can handle larger loads and is suitable for high-power applications.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage allows for more flexibility in circuit design and increases the range of possible applications.

Nominal Transition Frequency (fT): 40 MHz

The high transition frequency indicates that this transistor can switch rapidly between on and off states, making it ideal for switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D44C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5306-33-102-0805, 5306331020805, 6105-14-276-9986, 6105142769986, 6105-14-276-9985, 6105142769985

NIIN

331020805, 142769986, 142769985

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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