Loading...

D44C3

STMicroelectronics

D44C3 by STMicroelectronics

D44C3 by STMicroelectronics is a NPN BJT transistor with max VCEsat of 0.5V, IC of 4A, and hFE of 20. Ideal for switching applications, it has a max power dissipation of 30W and operates up to 150 °C. Package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$7.800

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 99 parts In-Stock

1+ parts

$7.800

100+ parts

-

1k+ parts

-

10k+ parts

-

99

$7.800

-

-

-

Vyrian

USA . 4,376 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,376

-

-

-

-

Anansix

USA . 3,404 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,404

-

-

-

-

Digiode

USA . 1,176 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,176

-

-

-

-

R&J Components

USA . 141 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

141

-

-

-

-

DigiKey Marketplace

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Elcom Components

USA . 41 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

41

-

-

-

-

Electronics Depot

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

J & M Industries LLC

USA . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

DF Sales Co.

USA . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

DF Sales Co.

USA . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 958 parts In-Stock

1+ parts

$1.170

100+ parts

-

1k+ parts

-

10k+ parts

-

958

$1.170

-

-

-

Northwest PG Solutions

USA . 1,285 parts In-Stock

1+ parts

$1.287

100+ parts

-

1k+ parts

-

10k+ parts

-

1,285

$1.287

-

-

-

IDEA Electronic Components Group

UK . 2,078 parts In-Stock

1+ parts

$1.619

100+ parts

-

1k+ parts

$1.457

10k+ parts

-

2,078

$1.619

-

$1.457

-

MKK Technologies

India . 52 parts In-Stock

1+ parts

$3.045

100+ parts

-

1k+ parts

-

10k+ parts

-

52

$3.045

-

-

-

DigiPath Technology Company

USA . 52 parts In-Stock

1+ parts

$3.045

100+ parts

-

1k+ parts

-

10k+ parts

-

52

$3.045

-

-

-

Corphita

USA . 1,264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,264

-

-

-

-

Infinite Electronics LLP (Excess)

. 794 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

794

-

-

-

-

Parana Technologies

USA . 325 parts In-Stock

1+ parts

-

100+ parts

$1.936

1k+ parts

-

10k+ parts

-

325

-

$1.936

-

-

Supply Digital

USA . 171 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

171

-

-

-

-

A-Plus Industry Inc.

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

Overview

Experience the superior quality and reliability of the D44C3 Power Bipolar Junction Transistor by STMicroelectronics. Designed for switching applications, this NPN transistor offers a maximum VCEsat of just 0.5V and a minimum DC current gain of 20, ensuring efficient performance. With a maximum power dissipation of 30W and a collector-emitter voltage of 30V, this transistor is perfect for a wide range of electronic projects. Trust in STMicroelectronics' expertise and innovation to deliver high-quality components that meet your application needs. Elevate your designs with the D44C3 and unlock new possibilities today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the transistor a reliable choice for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, providing versatility in the design and functionality of electronic devices.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate this transistor into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast operation and efficient performance in various electronic switching circuits.

Maximum VCEsat: 0.5 V

With a low VCEsat value, this transistor minimizes power loss and heat dissipation, enhancing overall efficiency and reliability in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into circuit boards, offering convenience in assembly and installation processes.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure and reliable connection to the circuit board, ensuring stable performance and reducing the risk of electrical discontinuity.

Maximum Power Dissipation (Abs): 30 W

With a high power dissipation capacity, this transistor can handle significant loads and heat levels, making it suitable for demanding applications that require high power handling capabilities.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers mechanical stability and ease of mounting, providing a secure and reliable installation in electronic systems.

Maximum Power Dissipation Ambient: 30 W

The high ambient power dissipation rating ensures that the transistor can operate effectively in various environmental conditions without overheating or performance degradation.

Minimum DC Current Gain (hFE): 20

With a minimum hFE value of 20, this transistor provides consistent and reliable amplification of input signals, ensuring stable and accurate output in electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand elevated heat levels during operation, ensuring reliable performance in demanding environmental conditions.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating makes this transistor suitable for applications that require elevated voltage levels, providing flexibility and compatibility with various circuit requirements.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making them a preferred choice for a wide range of electronic applications due to their superior electronic properties.

Maximum Collector Current (IC): 4 A

With a high collector current rating, this transistor can handle significant currents, making it suitable for applications that require robust power handling capabilities.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good conductivity and solderability, ensuring a secure and reliable connection to the circuit board for stable performance and long-term durability.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and installation, making it easier to integrate this transistor into electronic systems with minimal complexity.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies with minimal signal distortion, making it suitable for applications that require fast switching speeds and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44C3 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

D44C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-025-6702, 5961010256702

NIIN

010256702

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20