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BD676G

Onsemi

BD676G by Onsemi

BD676G by Onsemi is a PNP power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max collector current of 4A and operating temperature of 150 °C, this transistor is designed for high-performance in various electronic circuits.

Median Price

$0.448

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3 parts In-Stock

1+ parts

$0.442

100+ parts

$0.391

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3

$0.442

$0.391

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Rochester

USA . 3,746 parts In-Stock

1+ parts

-

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$0.455

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$0.377

10k+ parts

$0.336

3,746

-

$0.455

$0.377

$0.336

Distributors (In-Stock)

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Digiode

USA . 407 parts In-Stock

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$0.354

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407

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DigiKey Marketplace

USA . 7,923 parts In-Stock

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Vyrian

USA . 5,090 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,500 parts In-Stock

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Chip Stock

USA . 525 parts In-Stock

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Halfin

Belgium . 95 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,927 parts In-Stock

1+ parts

$0.336

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1,927

$0.336

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Corohmni

South Africa . 128 parts In-Stock

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$0.373

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128

$0.373

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AZTECH Wire

Italy . 1,204 parts In-Stock

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$8.750

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QUARKTWIN TECHNOLOGY LTD

USA . 11,279 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

USA . 7,923 parts In-Stock

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$0.354

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A-Z Elektronik GmbH

Germany . 4,505 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,003 parts In-Stock

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TANS Electronics

Latvia . 2,763 parts In-Stock

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Kulean Microsystems

USA . 2,663 parts In-Stock

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SupplyDigital Components

Austria . 1,700 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,500 parts In-Stock

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Northwest PG Solutions

USA . 821 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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GreenTree Electronics

Israel . 500 parts In-Stock

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Problanco Electronics

Mexico . 451 parts In-Stock

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Native Components

USA . 391 parts In-Stock

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UHIMA Technologies

Türkiye . 204 parts In-Stock

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Overview

Elevate your amplifier projects with the high-quality BD676G from Onsemi. Designed with a built-in diode and resistor, this PNP power bipolar junction transistor offers exceptional performance and reliability. Ideal for various applications in the amplifier category, this transistor ensures smooth operation and maximum power dissipation of up to 40W. With a minimum DC current gain of 750 and a maximum collector-emitter voltage of 45V, the BD676G delivers outstanding value and benefits to customers seeking top-notch components for their electronic devices. Trust Onsemi for superior quality and unmatched expertise in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this product ideal for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and integration, saving time and effort for designers.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimized performance in amplification tasks.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy and secure mounting for the transistor in electronic circuits.

Minimum DC Current Gain (hFE): 750

High minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand high-temperature environments without failure.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating allows the transistor to handle high voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor in various electronic applications.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, making it suitable for applications requiring high power output.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and ensures reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies board layout and circuit design, making it easier to integrate the transistor into electronic devices.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD676G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD676G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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