Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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TRD236DT4
STMicroelectronics
STMicroelectronics TRD236DT4 is a NPN BJT transistor with 400V VCEO and 4A IC. It has a max power dissipation of 35W, hFE of 8, and operates up to 150 °C. Ideal for switching applications in surface mount designs due to its small outline package and built-in diode configuration.
4 A
400 V
SINGLE WITH BUILT-IN DIODE
8
TO-252
R-PSSO-G2
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NPN
35 W
Other Transistors
YES
GULL WING
SINGLE
SWITCHING
SILICON
NJVNJD35N04G
Onsemi
NJVNJD35N04G by Onsemi is a NPN Darlington BJT with 45W power dissipation, 4A collector current, and 300 min hFE. Ideal for automotive applications due to AEC-Q101 standard compliance and high transition frequency of 90MHz.
DARLINGTON
300
e3
260
45 W
AEC-Q101
MATTE TIN
30
90 MHz
BD438TG
The Onsemi BD438TG is a PNP BJT with max power dissipation of 36W, hFE of 85, and IC of 4A. Ideal for applications requiring high-power amplification in temperature range -55 to 150°C. Suitable for single configuration setups needing reliable performance with fT of 3MHz.
85
-55 Cel
PNP
36 W
NO
3 MHz
BULK128D-B
STMicroelectronics BULK128D-B is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications, it has a max VCE of 400V and Ptot of 55W in a plastic/epoxy package with matte tin finish.
R-PSIP-T3
3
IN-LINE
55 W
Not Qualified
THROUGH-HOLE
1.5 V
BUL39D
BUL39D by STMicroelectronics is a NPN Power BJT with 450V VCE, 4A IC, and 70W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. The transistor has a hFE of at least 4 and a turn-off time of 1600ns, making it suitable for high-power tasks.
450 V
4
TO-220AB
R-PSFM-T3
FLANGE MOUNT
70 W
Matte Tin (Sn)
1600 ns
1.1 V
BUL128
BUL128 by STMicroelectronics is a NPN BJT transistor with VCEsat of 1.5V, IC of 4A, and hFE of 10. It is used for switching applications in circuits requiring up to 60W power dissipation. The device operates at a max temperature of 150 °C and has a collector-emitter voltage rating of 400V.
HIGH RELIABILITY
10
60 W
3400 ns
BUL128FP
BUL128FP by STMicroelectronics is a NPN Power BJT with 400V VCEO, 4A IC, and 31W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it features silicon transistor element material and matte tin terminal finish.
ISOLATED
14
31 W
STD127DT4
STD127DT4 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 4A IC, and hFE of 5. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.
COLLECTOR
5
NOT SPECIFIED
STC04IE170HP
STC04IE170HP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 50W, operates at up to 150 °C, and supports a collector current of 4A. Ideal for efficient power management in electronic circuits.
SINGLE WITH BUILT-IN FET AND DIODE
TO-247
R-PSFM-T4
50 W
STC04IE170HV
STC04IE170HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 178W, operates at up to 150 °C, and supports a collector current of 4A. Ideal for high-performance electronic circuits.
178 W
STD840DN40
STD840DN40 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures reliable performance in various electronic circuits.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-PDIP-T8
3 W
DUAL
BUL742CFP
BUL742CFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 30W, a collector-emitter voltage of 400V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
25
30 W
STL128DNFP
STL128DNFP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 28W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.
28 W
STL128DN
STL128DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
40 W
TR236
TR236 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.
BULB742C-1
BULB742C-1 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 70W, a collector-emitter voltage of 400V, and operates up to 150 °C. This versatile transistor is ideal for various electronic circuits.
TO-262AA
PHE13005X,127
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 26 W; Maximum Collector Current (IC): 4 A; Transistor Application: SWITCHING;
26 W
TIN
STD845DN40
STD845DN40 from STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures efficient performance in various electronic circuits.
12
BULK128
BULK128 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for robust electronic designs requiring efficient performance.
APT13005DI-G1
Diodes Incorporated
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY;
DARLINGTON WITH BUILT-IN DIODE
TO-251
4 MHz
APT13005DT-G1
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Style (Meter): FLANGE MOUNT;
APT13005DTF-G1
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 8;
BD437T
The Onsemi BD437T is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min DC current gain of 40, it operates at up to 150 °C, making it suitable for high-power electronic circuits.
45 V
40
TO-225AA
e0
235
TIN LEAD
BD682T
BD682T by Onsemi is a PNP BJT transistor with 40W power dissipation, 4A collector current, and 10MHz transition frequency. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
100 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
750
AMPLIFIER
10 MHz
BD436T
The Onsemi BD436T is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min hFE of 50 and fT of 3MHz, it operates at up to 150 °C, making it suitable for high-power electronic circuits.
32 V
50
MJE15034
MJE15034 by Onsemi is a NPN BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with through-hole terminals.
350 V
30 MHz
MJE15035
MJE15035 by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max. collector-emitter voltage, and 4A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
BD676G
BD676G by Onsemi is a PNP power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max collector current of 4A and operating temperature of 150 °C, this transistor is designed for high-performance in various electronic circuits.
BD436TG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 4 A;
BD679AG
BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
80 V
MJE800G
MJE800G by Onsemi is a NPN power BJT with 40W Pd, 750 hFE, and 60V Vce. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it has a max collector current of 4A and transition frequency of 1MHz.
BUILT IN BIAS RESISTOR
60 V
TO-225
1 MHz
D44C12G
D44C12G by Onsemi is a NPN Power BJT with 80V VCEO, 4A IC, and 30W Ptot. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The transistor comes in a plastic package with through-hole terminals.
20
40 MHz
D45C12G
D45C12G by Onsemi is a PNP BJT transistor with 80V VCEO, 4A IC, and 30W power dissipation. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
Tin (Sn)
BUD42D-1G
BUD42D-1G by Onsemi is a NPN BJT transistor with 350V VCE, 4A IC, and 25W Ptot. Ideal for switching applications, it has a single configuration with built-in diode in a plastic/epoxy package suitable for through-hole mounting.
BUILT-IN ANTISATURATION NETWORK
25 W
2N5194G
The Onsemi 2N5194G is a PNP power BJT with max. collector-emitter voltage of 60V and max. collector current of 4A. It has a min. DC current gain of 10, making it suitable for switching applications with a max. power dissipation of 40W in a rectangular package style for through-hole mounting.
2 MHz
2N6035G
The Onsemi 2N6035G is a PNP power BJT with a max collector current of 4A and a min DC current gain of 100. It has a max operating temperature of 150 °C, making it suitable for amplifier applications. The transistor features a Darlington configuration with built-in diode and resistor, housed in a plastic/epoxy package with matte tin terminal finish.
100
1.5 W
25 MHz
2N6036G
2N6036G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in various electronic designs.
2N6039G
2N6039G by Onsemi is a NPN Power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in power applications.
BD435G
The Onsemi BD435G is a NPN Power BJT with 36W power dissipation, ideal for switching applications. Featuring a max collector-emitter voltage of 32V and max collector current of 4A, it operates up to 150°C. With a min hFE of 50 and fT of 3MHz, this transistor is suitable for various electronic circuits.
BD438G
The Onsemi BD438G is a PNP BJT transistor with 3 terminals, capable of handling up to 4A collector current and 36W power dissipation. It operates b/w -55°C to 150°C, making it suitable for switching applications due to its high transition frequency of 3MHz.
BD440G
BD440G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 36W power dissipation. Ideal for switching applications, it has a hFE of 25 and operates up to 150 °C. The through-hole package with flange mount suits various electronic designs.
BD675G
BD675G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 40W and a min DC current gain of 750. This transistor is commonly used in amplifier applications.
BD675AG
BD675AG by Onsemi is a NPN power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max operating temp of 150°C and VCE of 45V, this transistor has IC up to 4A.
BD676AG
BD676AG by Onsemi is a PNP BJT with 40W power dissipation, 750 min hFE, and 45V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
BD677AG
BD677AG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 4A. With a min DC current gain of 750, it is ideal for amplifier applications. This power transistor comes in a rectangular package style with through-hole terminals.
BD678G
BD678G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 60V, max collector current of 4A, and min DC current gain of 750 (hFE). With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 40W at a max operating temperature of 150°C.
BD678AG
BD678AG by Onsemi is a PNP power BJT with a max collector current of 4A and min DC current gain of 750. It features a built-in diode and resistor, making it ideal for amplifier applications. With a max operating temperature of 150°C, this transistor is suitable for high-power amplification needs.
BD680AG
The Onsemi BD680AG is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It offers a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 750. With a max power dissipation of 40W and operating temperature up to 150°C, it is suitable for various high-power electronic designs.
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