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4 A Power Bipolar Junction Transistors (BJT) 61

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BD682TG by Onsemi

BD682TG

Onsemi

BD682TG by Onsemi is a PNP power BJT with 40W max power dissipation, hFE of 750, and VCE of 100V. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

4 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

40 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

40

AMPLIFIER

SILICON

BD788G by Onsemi

BD788G

Onsemi

BD788G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 15W power dissipation. Ideal for switching applications, it has a hFE of 5 and operates up to 150°C. The through-hole package style makes it suitable for various electronic designs.

4 A

60 V

SINGLE

5

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

15 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

50 MHz

MJE521G by Onsemi

MJE521G

Onsemi

MJE521G by Onsemi is a NPN BJT transistor with 40V VCEO, 4A IC, and 40W Ptot. Ideal for switching applications, it has a single configuration in a plastic/epoxy package suitable for flange mount. Operating up to 135 °C, it offers a min hFE of 40 and features silicon element material.

4 A

40 V

SINGLE

40

TO-225AA

R-PSFM-T3

e3

1

3

135 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJE700G by Onsemi

MJE700G

Onsemi

MJE700G by Onsemi is a PNP power BJT with 40W max power dissipation, 750 min hFE, and 60V max VCE. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it offers high performance in various electronic designs.

BUILT IN BIAS RESISTOR

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE702G by Onsemi

MJE702G

Onsemi

MJE702G by Onsemi is a PNP BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

BUILT IN BIAS RESISTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE802G by Onsemi

MJE802G

Onsemi

MJE802G by Onsemi is a NPN BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor. With hFE of 750 and fT of 1MHz, this transistor operates at up to 150 °C in a rectangular package with matte tin finish.

BUILT IN BIAS RESISTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE803G by Onsemi

MJE803G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

BUILT IN BIAS RESISTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

BUL804 by STMicroelectronics

BUL804

STMicroelectronics

BUL804 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 450V. Ideal for high-power circuits with through-hole mounting.

4 A

450 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2N6034G by Onsemi

2N6034G

Onsemi

2N6034G by Onsemi is a PNP BJT with 40V VCEO, 4A IC, and 25MHz fT. Ideal for amplifier applications, it features a built-in diode and resistor in a plastic/epoxy package with through-hole terminals. Max power dissipation of 1.5W at 150 °C ensures reliable performance in various environments.

4 A

40 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

BUL704 by STMicroelectronics

BUL704

STMicroelectronics

BUL704 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

4 A

400 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NJVMJD148T4G-VF01 by Onsemi

NJVMJD148T4G-VF01

Onsemi

NJVMJD148T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 30, VCEO of 45V, and IC of 4A. Ideal for amplifier applications, it operates b/w -55 to 150 °C. This small outline package has Gull Wing terminals and is AEC-Q101 compliant.

COLLECTOR

4 A

45 V

SINGLE

30

R-PSSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

NJVMJD253T4G-VF01 by Onsemi

NJVMJD253T4G-VF01

Onsemi

NJVMJD253T4G-VF01 by Onsemi is a PNP BJT transistor with hFE of 15, VCEO of 100V, and IC of 4A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 40MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

COLLECTOR

4 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

40 MHz

MJE13005PBFREE by Central Semiconductor

MJE13005PBFREE

Central Semiconductor

MJE13005PBFREE by Central Semiconductor is a NPN BJT transistor for switching applications. It has VCEsat of 1V, IC of 4A, and hFE of 8. With max power dissipation of 75W, it operates b/w -65 to 150°C. Ideal for high-power switching circuits due to its fast rise/fall times and low collector-emitter voltage drop.

COLLECTOR

4 A

130 pF

400 V

SINGLE

8

900 ns

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

75 W

700 ns

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

4900 ns

800 ns

1 V