Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BC849BLT3G
Onsemi
BC849BLT3G by Onsemi is a NPN BJT with VCEsat of 0.6V, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.
.1 A
4.5 pF
30 V
SINGLE
200
TO-236
R-PDSO-G3
e3
1
3
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
.3 W
Not Qualified
Other Transistors
YES
Tin (Sn)
GULL WING
DUAL
40
SILICON
100 MHz
.6 V
MMUN2231LT1G
MMUN2231LT1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.4W. This surface-mount device comes in a small outline package suitable for high-temperature environments up to 150 °C.
BUILT-IN BIAS RESISTOR RATIO IS 1
50 V
SINGLE WITH BUILT-IN RESISTOR
8
.4 W
BIP General Purpose Small Signal
Matte Tin (Sn) - annealed
SWITCHING
MSC2712YT1G
MSC2712YT1G by Onsemi is a NPN BJT transistor with 120 min hFE, 50 MHz fT, and 150 °C max operating temp. Ideal for amplifier applications due to its 0.2W power dissipation, 0.1A max IC, and 50V max VCE. It comes in a small outline package with Gull Wing terminals for surface mount assembly.
120
.2 W
TIN
30
AMPLIFIER
50 MHz
MUN2111T3G
MUN2111T3G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This surface mount transistor comes in a small outline package with Gull Wing terminals.
35
PNP
.338 W
MUN5134DW1T1G
MUN5134DW1T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications, it has a max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, making it suitable for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 0.47
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
80
R-PDSO-G6
2
6
.15 W
MATTE TIN
2SA1576ART1G
2SA1576ART1G by Onsemi is a PNP BJT with hFE of 180, VCE of 50V, and IC of 0.1A. Ideal for amplifier applications, it's a surface-mount transistor in a small outline package with Gull Wing terminals.
180
BC182BG
BC182BG by Onsemi is a NPN BJT transistor with hFE of 180, ideal for amplifier applications. It has a max power dissipation of 0.35W and operates at up to 150 °C. With a max collector-emitter voltage of 50V and fT of 200MHz, it's suitable for various electronic designs.
TO-92
O-PBCY-T3
e1
ROUND
CYLINDRICAL
.35 W
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
200 MHz
BC212BG
BC212BG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1W, and hFE of 60. Ideal for amplifier applications, it has a max operating temp of 150 °C and VCE of 50V.
60
TO-226AA
1 W
280 MHz
BC212BRL1G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 280 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;
EUROPEAN PART NUMBER
Tin/Silver/Copper (Sn/Ag/Cu)
BC237BG
BC237BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for amplifier applications. Featuring a min. DC current gain of 200 and nominal transition frequency of 200MHz, it comes in a cylindrical package with through-hole terminals for easy installation.
45 V
BC237CG
BC237CG by Onsemi is a NPN BJT transistor with hFE of 380, VCE of 45V, and fT of 200MHz. Ideal for amplifier applications due to its 0.35W power dissipation, it has a single configuration in a cylindrical package with through-hole terminals. Operating up to 150 °C, it is suitable for various electronic designs.
380
BC239CG
BC239CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 380 and can handle a max collector current of 0.1 A. With a max operating temperature of 150 °C, it offers a nominal transition frequency of 280 MHz.
25 V
BC547ARL1G
BC547ARL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A. It has a min. DC current gain of 110, ideal for amplifier applications due to its high transition frequency of 300MHz and max. power dissipation of 0.625W in a cylindrical package style.
110
.625 W
300 MHz
BC547CZL1G
BC547CZL1G by Onsemi is a NPN BJT transistor with hFE of 420, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications, it has a max operating temp of 150°C and fT of 300MHz in a cylindrical package.
420
BC549CG
BC549CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 420 and can handle a max IC of 0.1A. With a max operating temperature of 150°C, it offers a transition frequency of 250MHz in a cylindrical package suitable for through-hole mounting.
LOW NOISE
250 MHz
BC550CG
BC550CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 420 and can handle a max collector current of 0.1A. With a max operating temperature of 150°C and a collector-emitter voltage of 45V, it is suitable for various electronic projects.
1.5 W
BC560CG
BC560CG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 380, and operates up to 150°C. With a VCE of 45V and IC of 0.1A, it offers high performance in a cylindrical package suitable for through-hole mounting.
BC560CZL1G
BC560CZL1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 380, and max. power dissipation of 0.625W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 45V and operates up to 150°C.
BC859BLT1G
BC859BLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 220, and max operating temp of 150 °C. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency of 100 MHz, and collector-emitter voltage of 30V.
220
TO-236AB
BC859BLT3G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BSP19AT1G
BSP19AT1G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 350V, max power dissipation of 1.5W, and min DC current gain of 40. With a package style of small outline and surface mount capability, it is ideal for compact electronic devices requiring high-speed switching capabilities.
COLLECTOR
350 V
TO-261AA
R-PDSO-G4
4
70 MHz
EMC3DXV5T5G
EMC3DXV5T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It has 2 elements, 5 terminals, hFE of 35, VCE of 50V, IC of 0.1A, and Ptot of 0.5W. This transistor operates up to 150 °C with a peak reflow temp of 260°C in a small outline package suitable for surface mount technology.
COMPLEX
R-PDSO-F5
5
NPN AND PNP
.5 W
FLAT
EMG2DXV5T1G
The Onsemi EMG2DXV5T1G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in small outline packages.
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
EMG2DXV5T5G
The Onsemi EMG2DXV5T5G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max operating temp of 150 °C, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.
MMBTA20LT1G
MMBTA20LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.225W, hFE of 40, and operates at up to 150 °C. With a max collector-emitter voltage of 40V and peak reflow temp of 260°C, it offers high performance in small outline packages for various electronic designs.
40 V
.225 W
125 MHz
MMBTA70LT1G
MMBTA70LT1G by Onsemi is a PNP BJT transistor with 40V VCEO, 0.1A IC, and 125MHz fT. It is ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.225W. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs requiring compact components.
MPS6521G
MPS6521G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 25V and max current of 0.1A. With a min DC current gain of 300, it's ideal for amplifier applications at up to 150 °C operating temperature. The package style is cylindrical with through-hole terminals for easy installation.
300
340 MHz
MPS6523G
MPS6523G by Onsemi is a PNP BJT transistor with hFE of 300, fT of 340 MHz, and IC of 0.1 A. Ideal for amplifier applications due to its max power dissipation of 0.625 W and operating temperature up to 150°C in a cylindrical package.
MPSA70RLRMG
MPSA70RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for amplifier applications due to its cylindrical package style, it operates at up to 150 °C and has a nominal transition frequency of 125MHz.
MUN5134T1G
MUN5134T1G by Onsemi is a PNP BJT transistor with single configuration and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is surface mountable and features a matte tin finish.
BUILT-IN BIAS RESISTOR RATIO IS 2.14
BIP General Purpose Small Signals
DN0150BDJ-7
Diodes Incorporated
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
SEPARATE, 2 ELEMENTS
R-PDSO-F6
60 MHz
DP0150ADJ-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
80 MHz
DP0150BDJ-7
BC558CZL1G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 360 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .1 A;
360 MHz
BC847BPDXV6T5G
BC847BPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 separate elements, and hFE of 200. It is used in amplifier applications, has a max power dissipation of 0.5W, operates up to 150 °C, with Vce(max) of 45V.
NOT SPECIFIED
BC847CDXV6T5G
BC847CDXV6T5G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and Vce of 45V. With a small outline package style and surface mount capability, it operates up to 150 °C and offers a transition frequency of 100MHz.
BC848CDXV6T1G
BC848CDXV6T1G by Onsemi is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a min hFE of 420 and can handle a max collector-emitter voltage of 30V. With a small outline package style and peak reflow temperature of 260°C, it offers high performance in compact designs.
BC848CDXV6T5G
BC848CDXV6T5G by Onsemi is a NPN BJT transistor with 2 elements, suitable for amplifier applications. It has a max collector-emitter voltage of 30V, max operating temp of 150 °C, and min DC current gain of 420 (hFE). This small outline package with flat terminals is surface mountable and has a peak reflow temp of 260°C.
BC858CDXV6T5G
BC858CDXV6T5G by Onsemi is a PNP BJT with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs.
EMX1DXV6T5G
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F6;
180 MHz
EMZ1DXV6T1G
The Onsemi EMZ1DXV6T1G is a Small Signal BJT with NPN and PNP types in a plastic/epoxy package. It has 2 elements, 6 terminals, and operates as an amplifier with a max power dissipation of 0.5W. With a min hFE of 120 and max fT of 180MHz, it's suitable for applications requiring high-frequency amplification in compact designs.
60 V
EMZ1DXV6T5G
The Onsemi EMZ1DXV6T5G is a Small Signal BJT with NPN and PNP configurations. It has 2 elements, 6 terminals, and a max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150°C, with a max collector-emitter voltage of 60V and transition frequency of 180MHz.
MPS5172G
MPS5172G by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 100, and VCE of 25V. Ideal for low-power applications in electronics due to its small package size and high DC current gain.
100
MPS5172RLRMG
MPS5172RLRMG by Onsemi is a NPN BJT with hFE of 100, VCE of 25V, and IC of 0.1A. Ideal for low-power applications in electronics due to its small size and high reliability. Suitable for use in various circuits requiring a single NPN transistor configuration.
EMT1DXV6T5G
EMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, hFE of 120, and VCE of 60V. Ideal for amplifier applications, it has a max operating temp of 150 °C and transition frequency of 140MHz. This small outline transistor is surface mountable with matte tin finish.
140 MHz
NSBA114EDXV6T5G
NSBA114EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for small outline applications requiring a transistor with max. power dissipation of 0.5W and min. DC current gain of 35 (hFE). Suitable for surface mount designs needing a compact rectangular package shape.
BUILT IN BIAS RESISTOR RATIO IS 1
NSBA123JDXV6T1G
NSBA123JDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. power dissipation of 0.5W. It has hFE of 80, VCE of 50V, and IC of 0.1A. Ideal for applications requiring small outline package style in surface mount technology.
BUILT IN BIAS RESISTOR RATIO IS 0.047
NSBA123JDXV6T5G
NSBA123JDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. It has max voltage of 50V, current of 0.1A, and power dissipation of 0.5W. Ideal for applications requiring small outline package style in temp up to 150 °C like signal amplification circuits.
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