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BSP19AT1G

Onsemi

BSP19AT1G by Onsemi

BSP19AT1G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 350V, max power dissipation of 1.5W, and min DC current gain of 40. With a package style of small outline and surface mount capability, it is ideal for compact electronic devices requiring high-speed switching capabilities.

Median Price

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Lifecycle Status

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Vyrian

USA . 4,568 parts In-Stock

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Digiode

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Martec Srl

Italy . 2,477 parts In-Stock

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ComSIT Distribution GmbH

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Euro-Tech

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

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GES GmbH

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Native Components

USA . 187 parts In-Stock

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$0.140

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$0.134

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Northwest PG Solutions

USA . 798 parts In-Stock

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$0.154

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$0.136

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Andel Nordic

Denmark . 5,575 parts In-Stock

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$0.880

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$0.613

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AZTECH Wire

Italy . 667 parts In-Stock

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$12.330

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Perfect Parts

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Microchip USA

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Problanco Electronics

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Kulean Microsystems

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Glotronic Ltd.

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TANS Electronics

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A-Z Elektronik GmbH

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Authorized Procurement Solutions

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Corphita

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Cyclops Electronics Ltd (Excess)

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Alle Elektronik GmbH

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Kepictronics

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SupplyDigital Components

Austria . 538 parts In-Stock

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Corohmni

South Africa . 452 parts In-Stock

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UHIMA Technologies

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Overview

Unleash the power of innovation with the BSP19AT1G by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled performance in switching applications. With a robust design and high-quality materials, this NPN transistor guarantees reliability and efficiency. Whether you're looking to optimize your circuitry or enhance your electronic projects, the BSP19AT1G delivers exceptional value and benefits that will take your creations to the next level. Trust Onsemi for cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering good performance and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and precise control over electrical signals.

Surface Mount: YES

Surface mount capability facilitates easy and compact PCB assembly, saving space and enhancing overall product design.

Package Shape: RECTANGULAR

Rectangular shape offers efficient placement on the PCB, optimizing space utilization and enabling streamlined circuit layouts.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections, enhancing reliability and ensuring good electrical contact.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capability allows the transistor to handle higher currents and voltages without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact designs, ideal for portable or miniaturized electronic devices.

Minimum DC Current Gain (hFE): 40

Minimum DC current gain of 40 ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows the transistor to operate reliably in demanding environments without overheating.

Maximum Collector-Emitter Voltage: 350 V

High maximum collector-emitter voltage rating of 350V makes the transistor suitable for applications requiring high voltage switching and amplification.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability, making the transistor suitable for a wide range of applications and operating conditions.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1A allows the transistor to handle moderate current loads, ensuring reliable switching and amplification capabilities.

Terminal Finish: TIN

Tin terminal finish provides good solderability and ensures reliable electrical connections, enhancing the overall durability of the transistor.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB layout and enables easy integration of the transistor into various circuit configurations.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and layout, making it easy to connect the transistor in different configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature of 30 seconds ensures quick and reliable soldering during PCB assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C enables efficient and reliable soldering, ensuring good electrical connections.

Nominal Transition Frequency (fT): 70 MHz

High nominal transition frequency of 70 MHz indicates fast switching speed, making the transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP19AT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSP19AT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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