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BSP19AT3

Onsemi

BSP19AT3 by Onsemi

BSP19AT3 by Onsemi is a NPN BJT transistor with 350V VCEO, 1A IC, and 70MHz fT. Ideal for switching applications in small outline packages, it has a min hFE of 40 and operates up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,310 parts In-Stock

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2,310

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Vyrian

USA . 1,571 parts In-Stock

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1,571

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Distributors (Availability)

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Native Components

USA . 273 parts In-Stock

1+ parts

$0.353

100+ parts

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$0.339

273

$0.353

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$0.339

Northwest PG Solutions

USA . 802 parts In-Stock

1+ parts

$0.389

100+ parts

-

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$0.343

802

$0.389

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$0.343

Problanco Electronics

Mexico . 7,502 parts In-Stock

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7,502

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Kulean Microsystems

USA . 4,900 parts In-Stock

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4,900

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SupplyDigital Components

Austria . 3,115 parts In-Stock

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3,115

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Corphita

USA . 2,145 parts In-Stock

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2,145

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TANS Electronics

Latvia . 1,566 parts In-Stock

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1,566

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UHIMA Technologies

Türkiye . 337 parts In-Stock

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337

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Corohmni

South Africa . 192 parts In-Stock

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Overview

Discover the power of the BSP19AT3 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that promises reliability and performance. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor is perfect for switching applications. With a high DC current gain and maximum collector-emitter voltage, this transistor offers exceptional value and benefits to customers seeking efficiency and precision in their electronic projects. Upgrade your designs with the BSP19AT3 and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation and protection for the transistor, making it durable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in low-power amplification and switching circuits, making this transistor suitable for such applications.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the transistor in circuits, making it user-friendly for various projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic circuits, making it a versatile component.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting on circuit boards and ensures a compact design for space-saving applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand higher temperatures, making it suitable for various industrial and automotive environments.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage rating of 350V allows for handling higher voltage applications, ensuring reliable performance in diverse circuit designs.

Nominal Transition Frequency (fT): 70 MHz

The high nominal transition frequency of 70 MHz indicates the transistor's ability to operate at higher frequencies, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP19AT3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSP19AT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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