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BSP19

Nexperia

BSP19 by Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): .1 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

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Vyrian

USA . 3,401 parts In-Stock

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Pegasus Components GmbH

Germany . 2,645 parts In-Stock

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Anansix

USA . 2,436 parts In-Stock

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Freddi Giovanni

Italy . 1,500 parts In-Stock

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GES GmbH

Germany . 1,219 parts In-Stock

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Chip Stock

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Digiode

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Speed Components Ltd

Israel . 600 parts In-Stock

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

France . 378 parts In-Stock

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Bristol Electronics

USA . 378 parts In-Stock

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Dan-Mar Components

USA . 378 parts In-Stock

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Resion

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Atlantic Semiconductor

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Digital Electronic Gebert Verwaltungs UG

Germany . 240 parts In-Stock

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Fibra_Brandt Electronic GMBH

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AZTECH Wire

Italy . 11,305 parts In-Stock

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$0.110

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One Stop Electronics

USA . 198 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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UNI Independent Distributors

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Northwest PG Solutions

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,289 parts In-Stock

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Kepictronics

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Native Components

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Supply Digital

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Corphita

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP19 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BSP19 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4940-99-882-1625, 4940998821625

NIIN

998821625

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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