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BSP19AT1

Onsemi

BSP19AT1 by Onsemi

BSP19AT1 by Onsemi is a NPN BJT transistor with 4 terminals, suitable for switching applications. It has a max power dissipation of 1.5W, hFE of 40, and can handle up to 350V collector-emitter voltage. Ideal for small outline packages in devices requiring high-speed switching capabilities at temperatures up to 150 °C.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 565 parts In-Stock

1+ parts

$0.250

100+ parts

$0.250

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$0.240

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565

$0.250

$0.250

$0.240

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Distributors (In-Stock)

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Freelance Electronics

USA . 800 parts In-Stock

1+ parts

$0.201

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$0.211

1k+ parts

$0.199

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800

$0.201

$0.211

$0.199

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Digiode

USA . 585 parts In-Stock

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$0.268

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585

$0.268

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Bristol Electronics

USA . 6,569 parts In-Stock

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6,569

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Flex Direct, LLC

USA . 4,872 parts In-Stock

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Vyrian

USA . 4,653 parts In-Stock

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4,653

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Atlantic Semiconductor

USA . 1,697 parts In-Stock

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1,697

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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1,000

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Microfarads

USA . 902 parts In-Stock

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902

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Legend Electronics Inc.

USA . 660 parts In-Stock

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660

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 450 parts In-Stock

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450

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Distributors (Availability)

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Corohmni

South Africa . 363 parts In-Stock

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$0.201

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363

$0.201

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Ampacity Inc.

Singapore . 111 parts In-Stock

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$0.240

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111

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Corphita

USA . 1,727 parts In-Stock

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$0.254

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$0.254

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SupplyDigital Components

Austria . 8,281 parts In-Stock

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8,281

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Problanco Electronics

Mexico . 4,283 parts In-Stock

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Infinite Electronics LLP (Excess)

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Kulean Microsystems

USA . 3,633 parts In-Stock

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TANS Electronics

Latvia . 2,188 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,100 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,400 parts In-Stock

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Kepictronics

USA . 700 parts In-Stock

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700

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Northwest PG Solutions

USA . 650 parts In-Stock

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650

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UHIMA Technologies

Türkiye . 585 parts In-Stock

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585

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Native Components

USA . 70 parts In-Stock

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Overview

Enhance your electronic projects with the BSP19AT1 from Onsemi, a top-tier manufacturer known for its high-quality components. This Small Signal Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum collector-emitter voltage of 350V and a maximum collector current of 0.1A. With a minimum DC current gain of 40 and a nominal transition frequency of 70MHz, this NPN transistor provides reliable performance in a compact package. Trust Onsemi to deliver innovative solutions for your circuit design needs, ensuring efficiency and precision every time. Elevate your projects with the BSP19AT1 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into circuits and ensures compatibility with other components.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and efficiency in switching circuits.

Surface Mount: YES

Being surface mountable allows for easy installation and saves space on the PCB, making it ideal for compact designs.

Package Shape: RECTANGULAR

The rectangular shape provides a standard form factor for easy mounting and integration into PCB layouts.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation capability, this transistor can handle demanding applications without overheating.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable amplification and signal processing in circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage rating makes this transistor suitable for high voltage applications.

Nominal Transition Frequency (fT): 70 MHz

The high nominal transition frequency enables fast switching speeds and high-frequency performance in circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP19AT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSP19AT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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