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BC859BLT1G

Onsemi

BC859BLT1G by Onsemi

BC859BLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 220, and max operating temp of 150 °C. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency of 100 MHz, and collector-emitter voltage of 30V.

Median Price

$0.372

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,544 parts In-Stock

1+ parts

$0.372

100+ parts

$0.037

1k+ parts

$0.024

10k+ parts

-

2,544

$0.372

$0.037

$0.024

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 576 parts In-Stock

1+ parts

$0.353

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-

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576

$0.353

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Vyrian

USA . 4,707 parts In-Stock

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4,707

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Flip Electronics

USA . 2,600 parts In-Stock

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2,600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,478 parts In-Stock

1+ parts

$0.335

100+ parts

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1,478

$0.335

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Corohmni

South Africa . 246 parts In-Stock

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$0.372

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246

$0.372

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Native Components

USA . 597 parts In-Stock

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$1.694

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597

$1.694

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Northwest PG Solutions

USA . 984 parts In-Stock

1+ parts

$1.863

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984

$1.863

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AZTECH Wire

Italy . 377 parts In-Stock

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$9.280

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377

$9.280

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Perfect Parts

USA . 18,572 parts In-Stock

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18,572

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TANS Electronics

Latvia . 8,339 parts In-Stock

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Kulean Microsystems

USA . 7,876 parts In-Stock

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7,876

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Problanco Electronics

Mexico . 5,352 parts In-Stock

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SupplyDigital Components

Austria . 3,760 parts In-Stock

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3,760

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Authorized Procurement Solutions

USA . 2,544 parts In-Stock

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2,544

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GreenTree Electronics

Israel . 2,544 parts In-Stock

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2,544

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UHIMA Technologies

Türkiye . 626 parts In-Stock

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626

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Overview

Enhance your electronic projects with the BC859BLT1G from Onsemi, a high-quality PNP transistor that offers reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this small signal BJT is perfect for a wide range of applications. With its gull wing terminal form and small outline package style, this transistor is ideal for surface mount designs. Experience the benefits of the BC859BLT1G, including a minimum DC current gain of 220 and a maximum collector-emitter voltage of 30V. Trust Onsemi to deliver superior quality and value with this versatile transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for portable and compact devices.

Polarity or Channel Type: PNP

PNP transistor allows for easy integration with other PNP components, providing versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in circuit layout.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy installation and placement on PCBs, optimizing space utilization.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels, suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 220

High minimum DC current gain ensures efficient amplification and signal processing capabilities.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in various temperature conditions.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor can handle moderate voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material ensures reliable and consistent performance over a wide temperature range, making it a popular choice in semiconductor devices.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for reliable performance in extreme cold conditions.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is suitable for low to moderate current applications.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connection to the PCB, improving overall reliability of the circuit.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency indicates fast switching speeds and high-frequency capabilities, making it suitable for amplification and signal processing in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC859BLT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

220

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC859BLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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