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.1 A Small Signal Bipolar Junction Transistors (BJT) 867

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC847CWH6433XTMA1 by Infineon Technologies

BC847CWH6433XTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC847PNE6327BTSA1 by Infineon Technologies

BC847PNE6327BTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

.1 A

45 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BC847PNH6433XTMA1 by Infineon Technologies

BC847PNH6433XTMA1

Infineon Technologies

Infineon Technologies' BC847PNH6433XTMA1 is a small signal BJT transistor with NPN and PNP polarity. It has a max collector-emitter voltage of 45V, making it suitable for amplifier applications. With a min DC current gain of 200 and a nominal transition frequency of 250MHz, it offers high performance in a compact rectangular package.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC847SE6327BTSA1 by Infineon Technologies

BC847SE6327BTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

45 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC847SH6433XTMA1 by Infineon Technologies

BC847SH6433XTMA1

Infineon Technologies

Infineon BC847SH6433XTMA1 is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for amplifier applications, it has a fT of 250MHz and IC max of 0.1A. This small outline transistor in gull wing package suits surface mount designs per AEC-Q101 standards.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC857SH6433XTMA1 by Infineon Technologies

BC857SH6433XTMA1

Infineon Technologies

BC857SH6433XTMA1 by Infineon: PNP BJT with hFE of 200, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package and high transition frequency. Suitable for surface mount designs with dual terminals in a rectangular shape.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BCM846SE6327HTSA1 by Infineon Technologies

BCM846SE6327HTSA1

Infineon Technologies

BCM846SE6327HTSA1 by Infineon Technologies is a NPN BJT with 2 elements, hFE of 200. It's used as an amplifier in surface mount applications, featuring max VCE of 65V and IC of 0.1A. Ideal for high-frequency operations with fT of 250MHz and can withstand up to 150°C operating temperature.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BCR108SH6433XTMA1 by Infineon Technologies

BCR108SH6433XTMA1

Infineon Technologies

Infineon's BCR108SH6433XTMA1 is a NPN BJT with 2 elements, built-in resistor, and hFE of 70. Ideal for switching applications with max VCE of 50V and IC of 0.1A. AEC-Q101 compliant, it operates at fT of 170MHz in a small outline package suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

170 MHz

BCR133SH6433XTMA1 by Infineon Technologies

BCR133SH6433XTMA1

Infineon Technologies

Infineon's BCR133SH6433XTMA1 is a NPN BJT with 2 elements and built-in resistor, ideal for switching applications. With a hFE of 30, it offers a max VCE of 50V and IC of 0.1A. This small outline transistor in gull wing package has fT of 130MHz, meeting AEC-Q101 standards.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

130 MHz

BCR148SH6433XTMA1 by Infineon Technologies

BCR148SH6433XTMA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BCR158WE6327HTSA1 by Infineon Technologies

BCR158WE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BCR166WE6327HTSA1 by Infineon Technologies

BCR166WE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

160 MHz

BCR183SH6433XTMA1 by Infineon Technologies

BCR183SH6433XTMA1

Infineon Technologies

Infineon's BCR183SH6433XTMA1 is a PNP BJT with 2 elements and built-in resistor, ideal for switching applications. Featuring a max collector-emitter voltage of 50V, it has a min DC current gain of 30 and can handle up to 0.1A collector current. This small outline transistor operates at a nominal transition frequency of 200MHz, meeting AEC-Q101 standards.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BCR183WE6327HTSA1 by Infineon Technologies

BCR183WE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BCR22PNH6433XTMA1 by Infineon Technologies

BCR22PNH6433XTMA1

Infineon Technologies

BCR22PNH6433XTMA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistor for switching applications. This transistor has a max Vce of 50V, hFE of 50, and fT of 130MHz, making it suitable for high-frequency switching circuits in automotive electronics.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

50

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

130 MHz

BCR35PNH6433XTMA1 by Infineon Technologies

BCR35PNH6433XTMA1

Infineon Technologies

Infineon's BCR35PNH6433XTMA1 is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors, a max VCE of 50V, and hFE of 70. This surface-mount transistor has a package style of small outline and operates at a nominal fT of 150MHz.

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BC856BWH6327 by Infineon Technologies

BC856BWH6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

LOW NOISE

.1 A

65 V

SINGLE

220

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BCR108WH6433 by Infineon Technologies

BCR108WH6433

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

BCV62BE6433HTMA1 by Infineon Technologies

BCV62BE6433HTMA1

Infineon Technologies

PNP; Configuration: CURRENT MIRROR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 30 V;

.1 A

30 V

CURRENT MIRROR

220

R-PDSO-G4

2

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SILICON

250 MHz

BC846PNH6727 by Infineon Technologies

BC846PNH6727

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC846SH6727XTSA1 by Infineon Technologies

BC846SH6727XTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC847CWB6327 by Infineon Technologies

BC847CWB6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC847CWH6778XTSA1 by Infineon Technologies

BC847CWH6778XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC847PNH6727XTSA1 by Infineon Technologies

BC847PNH6727XTSA1

Infineon Technologies

Infineon's BC847PNH6727XTSA1 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 200 min hFE, 45V VCE max, and 250MHz fT. The transistor comes in a small outline package with Gull Wing terminals, making it suitable for surface mount designs.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC847SH6727XTSA1 by Infineon Technologies

BC847SH6727XTSA1

Infineon Technologies

BC847SH6727XTSA1 by Infineon Technologies is a NPN BJT with 2 elements, hFE of 200. It has a VCE of 45V and IC of 0.1A, suitable for amplifier applications. This transistor is surface mountable, with Gull Wing terminals in a small outline package shape.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC856BWH6433 by Infineon Technologies

BC856BWH6433

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

LOW NOISE

.1 A

65 V

SINGLE

220

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC857BWH6778XTSA1 by Infineon Technologies

BC857BWH6778XTSA1

Infineon Technologies

Infineon's BC857BWH6778XTSA1 is a PNP BJT transistor with hFE of 220, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly. AEC-Q101 compliant, this transistor is designed for automotive electronics.

LOW NOISE

.1 A

45 V

SINGLE

220

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BCM856SH6778 by Infineon Technologies

BCM856SH6778

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BCR10PNH6727XTSA1 by Infineon Technologies

BCR10PNH6727XTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

130 MHz

BCR10PNH6730XTMA1 by Infineon Technologies

BCR10PNH6730XTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

130 MHz

BCR133B6327 by Infineon Technologies

BCR133B6327

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

130 MHz

BCR133SE6327BTSA1 by Infineon Technologies

BCR133SE6327BTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 6;

BUILT-IN BIAS RESISTOR RATIO IS 1

ISOLATED

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

130 MHz

BCR142B6327HTLA1 by Infineon Technologies

BCR142B6327HTLA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT-IN BIAS RESISTOR RATIO IS 2.14

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BCR119SH6433XTMA1 by Infineon Technologies

BCR119SH6433XTMA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

120

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

DTC114YU3T106 by ROHM

DTC114YU3T106

ROHM

ROHM DTC114YU3T106 is a NPN BJT with built-in resistor for switching applications. It has hFE of 68, VCE of 50V, and fT of 250MHz. The transistor comes in a small outline package with Gull Wing terminals made of silicon material.

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

AC857CWQ-7 by Diodes Incorporated

AC857CWQ-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

HIGH RELIABILITY

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

ADTA143XUAQ-13 by Diodes Incorporated

ADTA143XUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA143ZUAQ-13 by Diodes Incorporated

ADTA143ZUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SILICON

250 MHz

ADTC114YUAQ-13 by Diodes Incorporated

ADTC114YUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143TUAQ-13 by Diodes Incorporated

ADTC143TUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTOR;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143ZUAQ-13 by Diodes Incorporated

ADTC143ZUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

BC846BPN-AU_R1_000A1 by Panjit International

BC846BPN-AU_R1_000A1

Panjit International

BC846BPN-AU_R1_000A1 by Panjit Int. is a Small Signal BJT with NPN/PNP polarity, 2 elements, and Gull Wing terminals. Ideal for amplifier applications, it has hFE of 200, VCE of 65V, and fT of 100MHz. AEC-Q101 compliant with temp range -55 to 150°C, it's a versatile choice for compact designs needing high gain and frequency performance.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

EMH25FHAT2R by ROHM

EMH25FHAT2R

ROHM

ROHM's EMH25FHAT2R is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features include PLASTIC/EPOXY body, surface mount compatibility, and AEC-Q101 standard compliance.

BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BCR08PNE6327BTSA1 by Infineon Technologies

BCR08PNE6327BTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

2 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

.3 V

BCR08PNE6433HTMA1 by Infineon Technologies

BCR08PNE6433HTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

2 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

.3 V

BCR22PNE6433HTMA1 by Infineon Technologies

BCR22PNE6433HTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

3 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

50

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

130 MHz

.3 V

AC847BWQ-13 by Diodes Incorporated

AC847BWQ-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

HIGH RELIABILITY

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

ACX114EUQ-13R by Diodes Incorporated

ACX114EUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz