Loading...

BC857BWH6778XTSA1

Infineon Technologies

BC857BWH6778XTSA1 by Infineon Technologies

Infineon's BC857BWH6778XTSA1 is a PNP BJT transistor with hFE of 220, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly. AEC-Q101 compliant, this transistor is designed for automotive electronics.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,599 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,599

-

-

-

-

Digiode

USA . 307 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

307

-

-

-

-

VNN

France . 45 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

45

-

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 5,831 parts In-Stock

1+ parts

$0.451

100+ parts

$0.433

1k+ parts

$0.415

10k+ parts

-

5,831

$0.451

$0.433

$0.415

-

AZTECH Wire

Italy . 250 parts In-Stock

1+ parts

$6.895

100+ parts

-

1k+ parts

-

10k+ parts

-

250

$6.895

-

-

-

Ampacity Inc.

Singapore . 1,161 parts In-Stock

1+ parts

$65.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,161

$65.050

-

-

-

Microchip USA

USA . 6,002 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,002

-

-

-

-

Corphita

USA . 118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

118

-

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Upgrade your electronic projects with the BC857BWH6778XTSA1 from Infineon Technologies, a top-quality Small Signal Bipolar Junction Transistor that guarantees reliability and performance. This PNP transistor is ideal for amplifier applications and boasts a high DC current gain of 220, ensuring optimal signal amplification. With a maximum collector-emitter voltage of 45V and a collector current of 0.1A, this transistor is perfect for various electronic designs. Trust in Infineon's reputation for excellence and choose the BC857BWH6778XTSA1 for superior quality and results in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, making it ideal for compact applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs that require PNP transistors.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in applications where only one transistor is needed.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance and reliability in amplifying signals.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape provides versatility in mounting options and allows for efficient use of board space.

Terminal Form: GULL WING

The gull wing terminal form ensures secure connections and ease of soldering during assembly.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in connection options for different circuit requirements.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact designs, ideal for applications where space is limited.

Minimum DC Current Gain (hFE): 220

The minimum DC current gain of 220 ensures reliable and consistent amplification of signals in various circuits.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage of 45V allows for operation in a wide range of circuits without risking damage.

Transistor Element Material: SILICON

The silicon material used in the transistor element ensures high performance, stability, and durability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate power applications effectively.

Terminal Position: DUAL

The dual terminal position provides options for versatile mounting and connection configurations.

Reference Standard: AEC-Q101

The compliance with AEC-Q101 standard ensures high quality, reliability, and durability for automotive electronic applications.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency of 250MHz allows for efficient amplification of high-frequency signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857BWH6778XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC857BWH6778XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20