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BCR183SH6433XTMA1

Infineon Technologies

BCR183SH6433XTMA1 by Infineon Technologies

Infineon's BCR183SH6433XTMA1 is a PNP BJT with 2 elements and built-in resistor, ideal for switching applications. Featuring a max collector-emitter voltage of 50V, it has a min DC current gain of 30 and can handle up to 0.1A collector current. This small outline transistor operates at a nominal transition frequency of 200MHz, meeting AEC-Q101 standards.

Median Price

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Lifecycle Status

EOL

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 5,958 parts In-Stock

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VNN

France . 450 parts In-Stock

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Digiode

USA . 345 parts In-Stock

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345

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Nova Conductors

Japan . 100 parts In-Stock

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Modulus Dynamics

Lithuania . 22,598 parts In-Stock

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$0.322

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$0.309

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$0.296

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AZTECH Wire

Italy . 567 parts In-Stock

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$8.431

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Ampacity Inc.

Singapore . 643 parts In-Stock

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$21.050

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643

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Continental Prestige Electronics

USA . 5,210 parts In-Stock

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Argo Parts USA

USA . 4,248 parts In-Stock

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Corphita

USA . 764 parts In-Stock

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Bastille Electronics

Australia . 72 parts In-Stock

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Overview

Looking for a reliable solution for your switching applications? Look no further than the BCR183SH6433XTMA1 by Infineon Technologies. With a reputation for quality and innovation, Infineon delivers small signal bipolar junction transistors that meet the highest standards in the industry. This PNP transistor comes in a convenient rectangular package with a built-in resistor, making it easy to integrate into your designs. Whether you're working on automotive electronics or consumer devices, this transistor offers excellent performance and reliability. Upgrade your projects today with the BCR183SH6433XTMA1 and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switch configurations, making this transistor versatile for various circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

This configuration simplifies circuit design by including a built-in resistor, saving space and reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient performance in turning circuits on and off.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving assembly time and reducing overall size of the system.

Terminal Form: GULL WING

The gull wing terminal form provides easy soldering and secure connection, ensuring reliability in the circuit.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures stable and consistent amplification of current, making the transistor reliable in various applications.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle higher voltage levels without risk of damage, improving overall circuit safety.

Transistor Element Material: SILICON

Silicon is a widely used material for transistors due to its performance and reliability, ensuring high-quality operation of the transistor.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, making it suitable for a variety of electronic applications.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that the transistor meets stringent automotive industry requirements, making it suitable for automotive applications.

Nominal Transition Frequency (fT): 200 MHz

With a high nominal transition frequency, this transistor can switch at a fast rate, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR183SH6433XTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR183SH6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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