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BC847PNH6433XTMA1

Infineon Technologies

BC847PNH6433XTMA1 by Infineon Technologies

Infineon Technologies' BC847PNH6433XTMA1 is a small signal BJT transistor with NPN and PNP polarity. It has a max collector-emitter voltage of 45V, making it suitable for amplifier applications. With a min DC current gain of 200 and a nominal transition frequency of 250MHz, it offers high performance in a compact rectangular package.

Median Price

$0.074

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 140,000 parts In-Stock

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$0.067

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$0.067

Arrow

USA . 20,000 parts In-Stock

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$0.080

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$0.080

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Nova Conductors

Japan . 100 parts In-Stock

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$0.115

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100

$0.115

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Vyrian

USA . 3,899 parts In-Stock

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VNN

France . 3,751 parts In-Stock

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Digiode

USA . 278 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 354,887 parts In-Stock

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$0.046

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Semicontronic

India . 354,797 parts In-Stock

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$0.046

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$0.045

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$0.045

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$0.045

$0.045

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Modulus Dynamics

Lithuania . 8,009 parts In-Stock

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$0.115

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$0.110

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$0.106

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Corohmni

South Africa . 199 parts In-Stock

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Continental Prestige Electronics

USA . 2,233 parts In-Stock

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$0.113

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Netroflash

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,688 parts In-Stock

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Aztec Data Supply Inc.

USA . 14,733 parts In-Stock

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$0.436

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14,733

$0.436

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AZTECH Wire

Italy . 776 parts In-Stock

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$19.110

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Perfect Parts

USA . 1,131,200 parts In-Stock

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Microchip USA

USA . 6,694 parts In-Stock

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Corphita

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Overview

Experience the power of reliable performance with the BC847PNH6433XTMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies brings you the highest quality small signal bipolar junction transistors (BJT) that are guaranteed to exceed your expectations. With its NPN and PNP polarity or channel type configuration, this transistor is perfect for amplifiers and other applications. Its surface mount capability and rectangular package shape make it versatile and easy to use. Benefit from its dual terminal position, maximum collector-emitter voltage of 45V, and minimum DC current gain of 200. Trust Infineon Technologies to deliver exceptional value and performance with the BC847PNH6433XTMA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material provides excellent durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN AND PNP

The NPN and PNP polarity or channel type of this transistor allows for versatile use in both positive and negative circuit configurations, offering flexibility for different amplifier designs.

Configuration: SEPARATE, 2 ELEMENTS

With a separate configuration and two elements, this transistor enables efficient amplification by allowing independent control over each element, promoting optimal performance in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures reliable signal amplification, making it an ideal choice for audio and other small signal amplification needs.

Surface Mount: YES

This transistor's surface mount capability enhances ease of installation and facilitates the production of compact circuit boards, making it suitable for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular package shape of this transistor enables straightforward integration into electronic circuits, allowing for efficient board layout and compact designs.

Terminal Form: GULL WING

The gull wing terminal form of this transistor simplifies soldering and ensures secure connections, facilitating efficient assembly and maintenance processes.

No. of Elements: 2

With two elements, this transistor offers increased functionality and versatility in various amplifier circuit designs, providing enhanced performance and design possibilities.

No. of Terminals: 6

The six terminals of this transistor allow for easier connection and integration into circuitry, enabling seamless electrical interface and reducing wiring complexity.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this transistor enhances space efficiency and allows for high-density board layouts, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 200

With a minimum DC current gain of 200, this transistor ensures efficient signal amplification even at low input currents, offering reliable performance in small signal amplification circuits.

Maximum Collector-Emitter Voltage: 45 V

The maximum collector-emitter voltage of 45V provides a sufficient voltage rating for various applications, ensuring safe and reliable operation of the transistor.

Transistor Element Material: SILICON

The silicon transistor element material offers excellent electronic properties and reliability, making it a commonly used material that ensures stable performance and longevity.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, making it suitable for a wide range of small signal applications.

Terminal Position: DUAL

The dual terminal position of this transistor allows for convenient connections and flexible mounting options, enabling easy integration into circuit designs.

Nominal Transition Frequency (fT): 250 MHz

With a nominal transition frequency of 250MHz, this transistor can handle high-frequency signals effectively, making it suitable for applications requiring fast switching and amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847PNH6433XTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847PNH6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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