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BCR108SH6433XTMA1

Infineon Technologies

BCR108SH6433XTMA1 by Infineon Technologies

Infineon's BCR108SH6433XTMA1 is a NPN BJT with 2 elements, built-in resistor, and hFE of 70. Ideal for switching applications with max VCE of 50V and IC of 0.1A. AEC-Q101 compliant, it operates at fT of 170MHz in a small outline package suitable for surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 7,678 parts In-Stock

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Digiode

USA . 897 parts In-Stock

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VNN

France . 649 parts In-Stock

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649

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Aztec Data Supply Inc.

USA . 879 parts In-Stock

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$0.353

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Corohmni

South Africa . 653 parts In-Stock

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$1.052

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Modulus Dynamics

Lithuania . 15,892 parts In-Stock

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$1.329

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$1.276

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$1.223

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Ampacity Inc.

Singapore . 1,621 parts In-Stock

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$9.050

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AZTECH Wire

Italy . 541 parts In-Stock

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$13.986

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QUARKTWIN TECHNOLOGY LTD

USA . 22,679 parts In-Stock

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Microchip USA

USA . 6,813 parts In-Stock

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Continental Prestige Electronics

USA . 5,591 parts In-Stock

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Argo Parts USA

USA . 1,988 parts In-Stock

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Aranea Global

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Corphita

USA . 131 parts In-Stock

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Overview

Experience the power of innovation with the BCR108SH6433XTMA1 by Infineon Technologies, a cutting-edge Small Signal Bipolar Junction Transistor designed for switching applications. Crafted with precision and quality in mind, this NPN transistor boasts a compact design with built-in resistors, offering seamless integration into a variety of electronic devices. Whether you're looking to enhance the performance of your circuits or improve energy efficiency, the BCR108SH6433XTMA1 delivers unparalleled reliability and functionality. Elevate your projects with this high-performance component from a trusted manufacturer - Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for housing the components.

Polarity or Channel Type: NPN

Commonly used type for amplification and switching circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Provides flexibility in circuit design and simplifies component count.

Transistor Application: SWITCHING

Optimized for switching applications with fast switching speeds.

Surface Mount: YES

Enables easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Compact shape for space-saving designs.

Terminal Form: GULL WING

Facilitates reliable surface mounting on PCBs.

No. of Elements: 2

Dual-element design for added functionality.

No. of Terminals: 6

Provides multiple connection points for versatility in circuit design.

Package Style (Meter): SMALL OUTLINE

Ideal for small devices with space constraints.

Minimum DC Current Gain (hFE): 70

Ensures consistent amplification performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low-voltage applications.

Transistor Element Material: SILICON

High-performance material for efficient transistor operation.

Maximum Collector Current (IC): 0.1 A

Sufficient current handling capacity for various applications.

Terminal Position: DUAL

Allows for easy connection and layout in circuits.

Reference Standard: AEC-Q101

Compliance with automotive industry quality standards.

Nominal Transition Frequency (fT): 170 MHz

High frequency capability for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR108SH6433XTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR108SH6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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