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.1 A Small Signal Bipolar Junction Transistors (BJT) 867

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ACX143ZUQ-13R by Diodes Incorporated

ACX143ZUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC143TUQ-13 by Diodes Incorporated

ADC143TUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC143ZUQ-13 by Diodes Incorporated

ADC143ZUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

BC857BW-G by Comchip Technology

BC857BW-G

Comchip Technology

BC857BW-G by Comchip Technology is a PNP BJT with max power dissipation of 0.15W, hFE of 220, and fT of 100MHz. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.

.1 A

SINGLE

220

e3

1

150 Cel

260

PNP

.15 W

Other Transistors

YES

TIN

10

100 MHz

ADTA114ECAQ-13 by Diodes Incorporated

ADTA114ECAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY;

BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTC143TCAQ-7 by Diodes Incorporated

ADTC143TCAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;

HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA113ZCAQ-7 by Diodes Incorporated

ADTA113ZCAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA113ZUAQ-13 by Diodes Incorporated

ADTA113ZUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA113ZUAQ-7 by Diodes Incorporated

ADTA113ZUAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ACX115EUQ-13R by Diodes Incorporated

ACX115EUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 82;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

82

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ACX115EUQ-7R by Diodes Incorporated

ACX115EUQ-7R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

82

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADA123JUQ-13 by Diodes Incorporated

ADA123JUQ-13

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADA123JUQ-7 by Diodes Incorporated

ADA123JUQ-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC113TUQ-13 by Diodes Incorporated

ADC113TUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC113TUQ-7 by Diodes Incorporated

ADC113TUQ-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

BC857BW-HF by Comchip Technology

BC857BW-HF

Comchip Technology

BC857BW-HF by Comchip Technology is a PNP BJT transistor for switching applications. With a VCEsat of 0.65V, hFE of 220, and IC of 0.1A, it operates at a max temperature of 150°C. Its small outline package with GULL WING terminals makes it suitable for compact electronic designs.

.1 A

4.5 pF

45 V

SINGLE

220

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.15 W

.15 W

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

.65 V

BC847QAPN,147 by Nexperia

BC847QAPN,147

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: NO LEAD;

COLLECTOR

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-N6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

BC857CQA,147 by Nexperia

BC857CQA,147

Nexperia

BC857CQA,147 by Nexperia is a PNP BJT transistor with hFE of 420. It has VCE of 45V and IC of 0.1A, suitable for switching applications. This SOT23-3 packaged transistor operates at a transition frequency of 100MHz, conforming to AEC-Q101 and IEC-60134 standards.

COLLECTOR

.1 A

45 V

SINGLE

420

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

PDTA114EQA,147 by Nexperia

PDTA114EQA,147

Nexperia

Nexperia's PDTA114EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and IC of 0.1A. This small outline transistor has a transition frequency of 180MHz and meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA123JQA,147 by Nexperia

PDTA123JQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT IN BIAS RESISTANCE RATIO IS 21

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA143EQA,147 by Nexperia

PDTA143EQA,147

Nexperia

Nexperia's PDTA143EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 180MHz. This transistor has a plastic/epoxy body, is surface mountable, and has tin finish terminals.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA143XQA,147 by Nexperia

PDTA143XQA,147

Nexperia

Nexperia's PDTA143XQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 50, VCE of 50V, and fT of 180MHz. Its small outline package makes it suitable for surface mount designs in automotive electronics meeting AEC-Q101 standards.

BUILT IN BIAS RESISTANCE RATIO IS 2.1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA143ZQA,147 by Nexperia

PDTA143ZQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN;

BUILT IN BIAS RESISTANCE RATIO IS 10

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA144EQA,147 by Nexperia

PDTA144EQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTC114EQA,147 by Nexperia

PDTC114EQA,147

Nexperia

Nexperia's PDTC114EQA,147 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 230MHz. This small outline transistor has tin finish, dual terminals, and can handle IC up to 0.1A.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PDTC114YQA,147 by Nexperia

PDTC114YQA,147

Nexperia

Nexperia's PDTC114YQA,147 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 100, VCE of 50V, and fT of 230MHz. It comes in a small outline package with tin finish and can withstand peak reflow temp of 260°C.

BUILT IN BIAS RESISTANCE RATIO IS 4.7

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PDTC143XQA,147 by Nexperia

PDTC143XQA,147

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 2.1;

BUILT IN BIAS RESISTANCE RATIO IS 2.1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PDTC143ZQA,147 by Nexperia

PDTC143ZQA,147

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 10

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PDTC144EQA,147 by Nexperia

PDTC144EQA,147

Nexperia

Nexperia's PDTC144EQA,147 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 80, VCE of 50V, and fT of 230MHz. This small outline transistor has tin finish, no lead terminals, and can handle up to 0.1A collector current.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

ADTA114YUAQ-7 by Diodes Incorporated

ADTA114YUAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA124ECAQ-7 by Diodes Incorporated

ADTA124ECAQ-7

Diodes Incorporated

The Diodes Inc. ADTA124ECAQ-7 is a PNP BJT with 3 terminals, hFE of 56, and IC of 0.1A. It has a max power dissipation of 0.31W and operates b/w -55 to 150°C. Ideal for small outline applications requiring a transistor with built-in resistor in automotive environments compliant with AEC-Q101 standards.

HIGH RELIABILITY

.1 A

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143XUAQ-13 by Diodes Incorporated

ADTC143XUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

RN2303,LF by Toshiba

RN2303,LF

Toshiba

Toshiba's RN2303,LF is a PNP BJT transistor with VCEsat of 0.3V and hFE of 70. Ideal for switching applications, it has a max IC of 0.1A and fT of 200MHz. Its GULL WING terminals make it suitable for surface mount designs in compact electronic devices.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.1 W

.1 W

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

200 MHz

.3 V

ADTA143ECAQ-13 by Diodes Incorporated

ADTA143ECAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISITOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA143ECAQ-7 by Diodes Incorporated

ADTA143ECAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISITOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC124EUAQ-7 by Diodes Incorporated

ADTC124EUAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISITOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143ECAQ-7 by Diodes Incorporated

ADTC143ECAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISITOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

RN1313(TE85LF) by Toshiba

RN1313(TE85LF)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

120

1

NPN

.15 W

BIP General Purpose Small Signal

YES

SILICON

RN2404-(TE85LF) by Toshiba

RN2404-(TE85LF)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;

.1 A

80

1

260

PNP

.2 W

BIP General Purpose Small Signal

YES

30

SILICON

NSVBC123JDXV6T5G by Onsemi

NSVBC123JDXV6T5G

Onsemi

NSVBC123JDXV6T5G by Onsemi is a NPN BJT transistor with 0.25 V max VCEsat, 80 min hFE, and 50 V max VCE. It is used for switching applications in automotive electronics due to its AEC-Q101 reference standard compliance and 0.1 A max IC.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.5 W

AEC-Q101

YES

FLAT

DUAL

SWITCHING

SILICON

.25 V

ABC857BW-HF by Comchip Technology

ABC857BW-HF

Comchip Technology

ABC857BW-HF by Comchip Technology is a PNP BJT transistor with VCEsat of 0.65V, hFE of 220, and IC of 0.1A. Ideal for amplifier applications, it has a max operating temperature of 150°C and collector-emitter voltage of 45V. Suitable for surface mount with gull wing terminals in a small outline package style.

LOW NOISE

.1 A

5 pF

45 V

SINGLE

220

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

.65 V

BC846BM3-TP by Micro Commercial Components

BC846BM3-TP

Micro Commercial Components

BC846BM3-TP by Micro Commercial Components is a Small Signal BJT with hFE of 200, VCE of 65V, and IC of 0.1A. It features Matte Tin finish, withstands peak reflow at 260°C for 10s. Ideal for low-power applications requiring reliable signal amplification.

.1 A

65 V

200

e3

260

MATTE TIN

10

RN1101MFV,L3F by Toshiba

RN1101MFV,L3F

Toshiba

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

.7 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

YES

FLAT

DUAL

SWITCHING

SILICON

.3 V

ADTC143XUAQ-7 by Diodes Incorporated

ADTC143XUAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

GULL WING

DUAL

SILICON

250 MHz

ADTA144WCAQ-7 by Diodes Incorporated

ADTA144WCAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA144WCAQ-13 by Diodes Incorporated

ADTA144WCAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA144VCAQ-7 by Diodes Incorporated

ADTA144VCAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 0.21

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA144VCAQ-13 by Diodes Incorporated

ADTA144VCAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 0.21

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz