Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NSBA124EDXV6T5G
Onsemi
NSBA124EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 60. It has VCE of 50V, IC of 0.1A, and Ptot of 0.5W. Ideal for small outline applications requiring high DC current gain and low collector-emitter voltage.
BUILT IN BIAS RESISTOR RATIO IS 1
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
60
R-PDSO-F6
e3
1
2
6
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
.5 W
Not Qualified
BIP General Purpose Small Signal
YES
TIN
FLAT
DUAL
SILICON
NSBA143TDXV6T5G
NSBA143TDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 160. It has VCE of 50V, IC of 0.1A, and Ptot of 0.5W. Ideal for small outline applications requiring high DC current gain and low collector-emitter voltage.
BUILT IN BIAS RESISTOR
160
MATTE TIN
30
NSBA143ZDXV6T5G
NSBA143ZDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V and IC of 0.1A, suitable for small outline applications requiring low collector current in electronic circuits. The transistor's flat terminals and plastic/epoxy package make it ideal for surface mount designs in various electronic devices.
BUILT IN BIAS RESISTOR RATIO IS 0.1
80
BCR189L3E6327
Infineon Technologies
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;
120
.25 W
BCR192L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;
70
BCR164L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 30;
BCR112L3E6327
Infineon's BCR112L3E6327 is a NPN BJT with 0.1A IC, 0.25W power dissipation, and hFE of 20. Ideal for surface mount applications in electronics requiring small signal amplification.
20
NPN
BCR114L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Peak Reflow Temperature (C): 260;
BCR153L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1;
BCR139L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;
BCR162L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
BCR183L3E6327
Infineon's BCR183L3E6327 is a PNP BJT with max. power dissipation of 0.25W, min. DC current gain of 30, and max. collector current of 0.1A. Ideal for surface mount applications in electronics due to its silicon element material and peak reflow temp of 260°C.
NSBC124XPDXV6T5G
NSBC124XPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistors, a max collector-emitter voltage of 50V, and a min DC current gain of 80 (hFE). With a package style of small outline and surface mount capability, it offers versatility in various electronic designs.
BUILT IN BIAS RESISTOR RATIO IS 2.14
150 Cel
NPN AND PNP
SWITCHING
DTA114TXV3T1G
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
.3 W
NSBC114EDXV6T5G
NSBC114EDXV6T5G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline package with matte tin finish operates up to 150 °C, making it suitable for various electronic devices.
35
NSBC123JDXV6T5G
NSBC123JDXV6T5G by Onsemi is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.25V, hFE of 80, and IC of 0.1A. With max operating temp at 150 °C, it's ideal for small outline SMT designs requiring low power dissipation.
BUILT IN BIAS RESISTOR RATIO 21.36
-55 Cel
.25 V
NSVMUN2236T1G
NSVMUN2236T1G by Onsemi is a NPN BJT with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150 °C and peak reflow temp of 260°C. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.
BUILT-IN BIAS RESISTOR RATIO IS 1
SINGLE WITH BUILT-IN RESISTOR
R-PDSO-G3
3
.338 W
AEC-Q101
GULL WING
ADTA114YUAQ-13
Diodes Incorporated
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 4.7
68
.33 W
AEC-Q101; IATF 16949, MIL-STD-202
250 MHz
ADTA124ECAQ-13
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
HIGH RELIABILITY
56
.31 W
ADTC144ECAQ-13
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISITOR RATIO IS 1
NSVEMT1DXV6T5G
NSVEMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.5V, hFE of 120, and max IC of 0.1A. With a max operating temp of 150 °C and AEC-Q101 standard compliance, it offers high performance in small outline packages.
SEPARATE, 2 ELEMENTS
AMPLIFIER
140 MHz
.5 V
NSVDTA123EM3T5G
NSVDTA123EM3T5G by Onsemi is a PNP BJT with built-in resistor for switching applications. Features include hFE of 8, VCE of 50V, and IC of 0.1A. Its small outline package with matte tin finish makes it suitable for surface mount designs in automotive electronics.
BUILT IN BIAS RESISTANCE RATIO IS 1
8
R-PDSO-F3
Matte Tin (Sn) - annealed
BC857BL3E6327XTMA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e4;
LOW NOISE
COLLECTOR
45 V
SINGLE
220
R-XBCC-N3
e4
UNSPECIFIED
CHIP CARRIER
GOLD
NO LEAD
BOTTOM
BCR129SH6327XTSA1
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;
BUILT-IN BIAS RESISTOR
R-PDSO-G6
150 MHz
BCR183UE6327HTSA1
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30;
200 MHz
DDC144TH-7-F
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
100
NSVMUN5333DW1T3G
NSVMUN5333DW1T3G by Onsemi is a Small Signal BJT with NPN and PNP types. It features separate elements with built-in resistor, VCEsat of 0.25V, and hFE min of 80. Ideal for automotive applications due to AEC-Q101 standard compliance and max operating temperature of 150 °C.
BUILT-IN BIAS RESISTOR RATIO IS 10
.385 W
NSVMMBT6517LT1G
NSVMMBT6517LT1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.1A, and min. DC current gain of 15. It is used in small outline packages for applications requiring high power dissipation and temp up to 150 °C.
350 V
15
TO-236AB
Other Transistors
40 MHz
NSVBC143TPDXV6T1G
NSVBC143TPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.25V, min hFE of 160, and can handle up to 0.1A collector current. With a package style of small outline and operating temperature range from -55°C to 150°C, it's suitable for various electronic designs requiring compact and efficient transistor solutions.
BC857BHZGT116
ROHM
ROHM BC857BHZGT116 is a PNP BJT transistor with hFE of 210, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package style and Gull Wing terminals for surface mounting. AEC-Q101 certified, suitable for automotive electronics requiring high reliability.
210
10
BC860CWH6327
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
420
NOT SPECIFIED
2SC3324-GR(TE85L,F
Toshiba
Toshiba's 2SC3324-GR(TE85L,F is a NPN BJT transistor with max power dissipation of 0.15W, min hFE of 200, and max IC of 0.1A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability.
200
125 Cel
.15 W
NSVBC143ZPDXV6T5G
NSVBC143ZPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring 2 elements with built-in resistor. With VCEsat of 0.25V, it operates in temperatures from -55 to 150 °C. Ideal for automotive applications due to AEC-Q101 standard compliance and max collector-emitter voltage of 50V.
BUILT IN BIAS RESISTOR RATIO IS 10
RN1406S,LF(D
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
BUILT IN BIAS RESISTANCE RATIO IS 10
RN2402S,LF(D
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
50
2SA1312-GR(TE85L,F
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
120 V
100 MHz
NSVBCW32LT1G
NSVBCW32LT1G by Onsemi is a NPN BJT with 32V VCEO, 0.1A IC, and hFE of 200. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150 °C max operating temp.
32 V
TO-236
DTC144EMFHAT2L
ROHM DTC144EMFHAT2L is a NPN BJT with built-in resistor, ideal for switching applications. Features include hFE of 68, VCE of 50V, and IC of 0.1A. Its small outline package makes it suitable for surface mount designs in automotive electronics.
e2
TIN COPPER
UMH2NFHATN
ROHM UMH2NFHATN is a NPN BJT with 2 elements & built-in resistor. It has hFE of 68, VCE of 50V, and fT of 250MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and Gull Wing terminals for surface mounting.
NSVMSB1218A-RT1G
NSVMSB1218A-RT1G by Onsemi is a PNP BJT transistor for amplifier applications. It has VCEsat of 0.5V, hFE of 210, and IC of 0.1A. With a max operating temperature of 150 °C, it comes in a small outline package with gull wing terminals.
BC847BW/SNF
Nexperia
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
Tin (Sn)
BC847BW/SNX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;
BC847CW/MIF
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
BC847CW/MIX
BC847CW/SNF
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
BC847CW/SNX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;
BCM856BSF
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
65 V
AEC-Q101; IEC-60134
175 MHz
PDTC114EU/MIF
PDTC114EU/MIF by Nexperia is a NPN BJT transistor with built-in resistor for switching applications. It has a hFE of 30, Vce of 50V, and IC of 0.1A. This small outline package features Gull Wing terminals and silicon element material, suitable for high-frequency operations up to 230MHz.
230 MHz
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