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.1 A Small Signal Bipolar Junction Transistors (BJT) 867

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
RN2305,LF by Toshiba

RN2305,LF

Toshiba

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

BUILT IN BAIS RESISTOR RATIO IS 21.36

.1 A

6 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.1 W

.1 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

DCX144EUQ-7R-F by Diodes Incorporated

DCX144EUQ-7R-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

.3 V

BC847W-QF by Nexperia

BC847W-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

BC857BS-QF by Nexperia

BC857BS-QF

Nexperia

BC857BS-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 45V. Package style is small outline with Gull Wing terminals.

.1 A

2.2 pF

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

BC857CWQ-13 by Diodes Incorporated

BC857CWQ-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.65 V

RN2904,LF by Toshiba

RN2904,LF

Toshiba

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

RN2903,LF by Toshiba

RN2903,LF

Toshiba

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

RN2902,LF by Toshiba

RN2902,LF

Toshiba

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

50

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

DDC143XU-13 by Diodes Incorporated

DDC143XU-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

DDC143XU-7 by Diodes Incorporated

DDC143XU-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

BC847A-QVL by Nexperia

BC847A-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847B-QVL by Nexperia

BC847B-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

200

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847W-QX by Nexperia

BC847W-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847A-QR by Nexperia

BC847A-QR

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847AW-QX by Nexperia

BC847AW-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847AW-QF by Nexperia

BC847AW-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846AW-QX by Nexperia

BC846AW-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846AW-QF by Nexperia

BC846AW-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846W-QF by Nexperia

BC846W-QF

Nexperia

BC846W-QF by Nexperia is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 110, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz. Ideal for small outline packages in automotive and industrial electronics.

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

PUMD3-QZ by Nexperia

PUMD3-QZ

Nexperia

PUMD3-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, hFE of 30, and can handle a max IC of 0.1A. With a package style of small outline and operating temperatures ranging from -65 to 150°C, it meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD3-QH by Nexperia

PUMD3-QH

Nexperia

PUMD3-QH by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, min hFE of 30, and can operate at temperatures up to 150°C. With a package style of small outline and dual terminal position, it offers high performance in a compact design.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMH2-QF by Nexperia

PUMH2-QF

Nexperia

PUMH2-QF by Nexperia is a NPN BJT with 2 elements, built-in resistor, and 0.15V VCEsat. Ideal for switching applications, it has a max IC of 0.1A, hFE of 80, and operates b/w -65 to 150°C. With a package style of small outline and Gull Wing terminals, it offers high performance in a compact design.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.15 V

BC857-QVL by Nexperia

BC857-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

125

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC857B-QVL by Nexperia

BC857B-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

220

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC857C-QVL by Nexperia

BC857C-QVL

Nexperia

BC857C-QVL by Nexperia is a PNP BJT transistor for switching applications. With a VCEsat of 0.65V, hFE of 420, and IC of 0.1A, it operates in temperatures from -65 to 150°C. This small outline package with Gull Wing terminals has a max VCE of 45V and fT of 100MHz.

.1 A

4.5 pF

45 V

SINGLE

420

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC857A-QR by Nexperia

BC857A-QR

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

125

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC846A-QVL by Nexperia

BC846A-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC856S-QF by Nexperia

BC856S-QF

Nexperia

BC856S-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.3V, hFE of 110, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 100MHz. This small outline transistor features a Gull Wing terminal form in a rectangular package shape.

.1 A

2.5 pF

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC847BPN-QZ by Nexperia

BC847BPN-QZ

Nexperia

BC847BPN-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels. It has 2 separate elements, Gull Wing terminals, and operates at -65 to 150°C. Ideal for switching applications, it offers VCEsat of 0.3V, hFE of 200, and fT of 100MHz in a small outline package.

.1 A

2.2 pF

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC856S-QH by Nexperia

BC856S-QH

Nexperia

BC856S-QH by Nexperia is a PNP BJT transistor with VCEsat of 0.3V, hFE of 110, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 100MHz. With a compact small outline package style, it features dual terminals in gull wing form.

.1 A

2.5 pF

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

PUMD9-QZ by Nexperia

PUMD9-QZ

Nexperia

PUMD9-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, min hFE of 100, and max operating temp of 150°C. With a package style of small outline and dual terminal position, it offers high performance in a compact design for various electronic circuits.

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMH9-QH by Nexperia

PUMH9-QH

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMH9-QF by Nexperia

PUMH9-QF

Nexperia

PUMH9-QF by Nexperia is a NPN BJT transistor with 2 elements and built-in resistor for switching applications. It features a max VCEsat of 0.1V, hFE of 100, and can handle a max collector-emitter voltage of 50V. This small outline transistor operates b/w -55 to 150 °C and has a nominal transition frequency of 230 MHz.

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMH9-QZ by Nexperia

PUMH9-QZ

Nexperia

Nexperia's PUMH9-QZ is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.1V, hFE of 100, and fT of 230MHz. With max ratings at 50V/0.1A, it operates from -55 to 150°C in small outline package for automotive (AEC-Q101) and general use (IEC-60134).

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMB11-QX by Nexperia

PUMB11-QX

Nexperia

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

3 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.1 V

PUMH10-QX by Nexperia

PUMH10-QX

Nexperia

The Nexperia PUMH10-QX is a NPN BJT with 2 elements, built-in resistor for switching applications. It has VCEsat of 0.1V, hFE of 100, and operates up to 150°C. With a max fT of 230MHz, it's ideal for AEC-Q101 automotive standards in small outline packages.

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

BC846BS-QF by Nexperia

BC846BS-QF

Nexperia

BC846BS-QF by Nexperia is a NPN BJT for switching applications. Features include VCEsat of 0.3V, hFE of 200, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz. Ideal for compact designs requiring high-speed switching capabilities.

.1 A

1.9 pF

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC857BW-QF by Nexperia

BC857BW-QF

Nexperia

BC857BW-QF by Nexperia is a PNP BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 220, and IC of 0.1A. With a max operating temp of 150°C, it's ideal for small outline packages in automotive electronics.

.1 A

3 pF

45 V

SINGLE

220

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.6 V

BC846S-QZ by Nexperia

BC846S-QZ

Nexperia

BC846S-QZ by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 110, and IC of 0.1A. With a max operating temperature of 150°C, it is ideal for small outline packages in automotive electronics.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QX by Nexperia

BC846S-QX

Nexperia

BC846S-QX by Nexperia is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 110, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz making it ideal for small outline packages in automotive electronics.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QF by Nexperia

BC846S-QF

Nexperia

BC846S-QF by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 110, and fT of 100MHz. With max ratings of 65V VCEO and 0.1A IC, it operates b/w -65 to 150°C.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QH by Nexperia

BC846S-QH

Nexperia

BC846S-QH by Nexperia is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.3V, min hFE of 110, and max IC of 0.1A. With a package style of small outline and dual terminal position, it operates b/w -65 to 150°C and has a fT of 100MHz.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

PUMD10-QH by Nexperia

PUMD10-QH

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD10-QF by Nexperia

PUMD10-QF

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD48-QZ by Nexperia

PUMD48-QZ

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD48-QH by Nexperia

PUMD48-QH

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD48-QX by Nexperia

PUMD48-QX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PDTC124ET-QVL by Nexperia

PDTC124ET-QVL

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

60

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V