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BC857BW-G

Comchip Technology

BC857BW-G by Comchip Technology

BC857BW-G by Comchip Technology is a PNP BJT with max power dissipation of 0.15W, hFE of 220, and fT of 100MHz. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.

Median Price

$0.091

Lifecycle Status

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4

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1k+

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Nova Conductors

Japan . 660 parts In-Stock

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Bristol Electronics

USA . 2,558 parts In-Stock

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$0.131

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$0.065

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$0.026

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Vyrian

USA . 4,239 parts In-Stock

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Dan-Mar Components

USA . 2,558 parts In-Stock

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Continental Prestige Electronics

USA . 3,553 parts In-Stock

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$0.051

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Argo Parts USA

USA . 3,440 parts In-Stock

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$0.051

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AZTECH Wire

Italy . 1,054 parts In-Stock

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$5.709

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QUARKTWIN TECHNOLOGY LTD

USA . 25,996 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.049

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$0.048

100

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$0.048

Overview

Elevate your electronic designs with the BC857BW-G PNP transistor by Comchip Technology. Known for their high-quality components, Comchip Technology delivers reliable and efficient solutions for small signal applications. The BC857BW-G offers customers exceptional performance with a minimum DC current gain of 220 and a maximum collector current of 0.1 A, making it ideal for a wide range of circuit designs. Whether you're working on amplifiers, oscillators, or voltage regulators, this transistor will provide the value, benefits, and advantages you need to bring your projects to life. Trust Comchip Technology to power your innovations.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications and can be easily integrated into existing circuit designs.

Configuration: SINGLE

Single configuration allows for simpler circuit design and easier troubleshooting.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving space and reducing overall product size.

Maximum Power Dissipation: 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 220

A high minimum DC current gain ensures reliable and consistent performance in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for operation in a wide range of environments without sacrificing performance.

Maximum Collector Current (IC): 0.1 A

The transistor can handle a maximum collector current of 0.1 A, making it suitable for low to moderate current applications.

Terminal Finish: TIN

TIN terminal finish ensures good solderability and durability during PCB assembly.

Maximum Time At Peak Reflow Temperature (s): 10

The transistor can withstand peak reflow temperatures for up to 10 seconds, ensuring reliable solder connections during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the transistor can be easily integrated into automated assembly processes.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates good high-frequency performance suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857BW-G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Comchip Technology

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

10

Nominal Transition Frequency (fT):

Trade Compliance

BC857BW-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Comchip Technology

Established in 2000, Comchip strives to become the leading global semiconductor solution provider, delivering solutions and support with cost and quality advantages. Based in Taiwan, Comchip is constantly expanding in key locations around the world to provide direct, superior customer service, with sales offices located in China, Silicon Valley and New York. With innovative research and patented manufacturing capabilities, Comchip offers products including bridge rectifiers, fast efficient rectifiers, switching diodes, Zener diodes, Schottky diodes, TVS and ESD surge protectors. Recent expansion of product offering also includes power semiconductor devices including transistor and MOSFET solutions. Comchip products cover a vast array of applications in the electronics industry including lighting, automotive, industrial computers, TFT-LCD panels, network/telecom, medical, and consumer electronics. To ensure superior quality and reliability, Comchip’s in-house labs and production facilities are aligned with current automotive industry requirements in accordance with industry standards including AEC-Q101, TS16949, ISO9001, and ISO14001.

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